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參數(shù)資料
| 型號(hào)： | PSMN009-100W |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | Circular Connector; Body Material:Aluminum Alloy; Series:MS3111; Number of Contacts:6; Connector Shell Size:10; Connecting Termination:Solder; Circular Shell Style:Cable Receptacle; Circular Contact Gender:Socket |
| 中文描述： | 100 A, 100 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 28K |
| 代理商： | PSMN009-100W |
Philips Semiconductors
Objective specification
TrenchMOS
transistor
PSMN009-100W
FEATURES
SYMBOL
QUICK REFERENCE DATA
’Trench’
technology
Very low on-state resistance
Fast switching
High thermal cycling performance
Low thermal resistance
V
DSS
= 100 V
I
D
= 100 A
R
DS(ON)
≤
9 m
GENERAL DESCRIPTION
PINNING
SOT429 (TO247)
N-channel
field-effect power transistor in a
plastic envelope using ’
trench
’
technology. The device has very
low
on-state
resistance.
intended for use in dc to dc
converters and general purpose
switching applications.
enhancement
mode
PIN
DESCRIPTION
1
gate
It
is
2
drain
3
source
tab
drain
The PSMN009-100W is supplied in
the SOT429 (TO247) conventional
leaded package.
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
V
DSS
Drain-source voltage
V
DGR
Drain-gate voltage
V
GS
Gate-source voltage
I
D
Continuous drain current
CONDITIONS
T
j
= 25 C to 175C
T
j
= 25 C to 175C; R
GS
= 20 k
MIN.
-
-
-
-
-
-
-
- 55
MAX.
100
100
±
20
100
1
79
300
300
175
UNIT
V
V
V
A
A
A
W
C
T
mb
= 25 C
T
mb
= 100 C
T
mb
= 25 C
T
mb
= 25 C
I
DM
P
D
T
j
, T
stg
Pulsed drain current
Total power dissipation
Operating junction and
storage temperature
AVALANCHE ENERGY LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
E
AS
Non-repetitive avalanche
energy
CONDITIONS
Unclamped inductive load, I
= 96 A;
t
p
= 0.2 ms; T
j
prior to avalanche = 25C;
V
DD
≤
50 V; R
GS
= 50
; V
GS
= 5 V
MIN.
-
MAX.
1255
UNIT
mJ
I
AS
Non-repetitive avalanche
current
-
100
A
d
g
s
2
3
1
1
Maximum continuous current limited by package.
February 1999
1
Rev 1.000
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PSMN009-100W,127 | 功能描述:MOSFET RAIL PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| PSMN010-100YS,115 | 功能描述:MOSFET MOSFET N-CH 100V SPAK RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| PSMN010-25YLC | 制造商:NXP Semiconductors 功能描述:MOSFET N CH 25V 39A LFPAK |
| PSMN010-25YLC,115 | 功能描述:MOSFET N-CH 25 V 10.6 MOHMS LOGIC LEVEL MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| PSMN010-55D | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel logic level TrenchMOS transistor |
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