參數(shù)資料
型號(hào)： PSD813F
廠商： 意法半導(dǎo)體
英文描述： Flash In-System-Programmable Microcontroller Peripherals(閃速，在系統(tǒng)可編程微控制器外圍器件，1M位閃速存儲(chǔ)器，256K位EEPROM，16K位SRAM)
中文描述： Flash在系統(tǒng)可編程微控制器外圍設(shè)備（閃速，在系統(tǒng)可編程微控制器外圍器件，100萬位閃速存儲(chǔ)器，256K位的EEPROM，16K的位的SRAM）
文件頁數(shù)： 98/130頁
文件大小： 650K
代理商： PSD813F
PSD813F Family
Preliminary
94
-90
-12
-15
Symbol
Parameter
Conditions Min
Max
Min
Max
Min
Max
Unit
t
ISCCF
t
ISCCH
t
ISCCL
t
ISCCF-P
t
ISCCH-P
t
ISCCL-P
t
ISCPSU
t
ISCPH
t
ISCPCO
TCK Clock Frequency (except for PLD)
TCK Clock High Time
TCK Clock Low Time
TCK Clock Frequency (for PLD only)
TCK Clock High Time (for PLD only)
TCK Clock Low Time (for PLD only)
ISC Port Set Up Time
ISC Port Hold Up Time
ISC Port Clock to Output
ISC Port High-Impedance to
Valid Output
ISC Port Valid Output to High-Impedance
(Note 1)
(Note 1)
(Note 1)
(Note 2)
(Note 2)
(Note 2)
18
16
14
MHz
ns
ns
MHz
ns
ns
ns
ns
ns
26
26
29
29
31
31
2
2
2
240
240
8
5
240
240
10
5
240
240
10
5
23
24
25
t
ISCPZV
23
24
25
ns
t
ISCPVZ
23
24
25
ns
ISC Timing
(5 V ± 10%)
Microcontroller Interface – PSD813F AC/DC Parameters
(5V ±10% Versions)
Symbol
Parameter
Min
Typ
Max
Unit
Flash Program
8.5
sec
Flash Bulk Erase (Preprogrammed) (Note 1)
3
30
sec
Flash Bulk Erase (Not Preprogrammed)
10
sec
t
WHQV3
t
WHQV2
t
WHQV1
Sector Erase (Preprogrammed)
1
30
sec
Sector Erase (Not Preprogrammed)
2.2
sec
Byte Program
14
1200
μs
Program/Erase Cycles (Per Sector)
100,000
cycles
t
WHWLO
Sector Erase Time-Out
100
μs
Flash Program, Write and Erase Times
(5 V ± 10%)
NOTE:
1. Programmed to all zeros before erase.
Symbol
Parameter
Min
Typ
Max
Unit
t
EEHWL
t
BLC
t
WCB
t
WCP
Write Protect After Power Up
5
msec
EEPROM Byte Load Cycle Timing (Note 1)
0.2
120
μsec
EEPROM Byte Write Cycle Time
4
10
msec
EEPROM Page Write Cycle Time (Note 2)
6
30
msec
Program/Erase Cycles (Per Sector)
10,000
cycles
EEPROM Write Times
(5 V ± 10%)
NOTES:
1. If the maximum time has elapsed between successive writes to an EEPROM page, the transfer of this data to EEPROM cells will
begin. Also, bytes cannot be written (loaded) to a page any faster than the indicated minimum type.
2. These specifications are for writing a page to EEPROM cells.
NOTES:
1. For “non-PLD” programming, erase or in ISC by-pass mode.
2. For program or erase PLD only.
相關(guān)PDF資料
PDF描述
PSD813FH(中文) Field Programmble Microcontroller Peripherals With Flash Memory(帶閃存的現(xiàn)場(chǎng)可編程微控制器)
PSD813FN(中文) Field Programmble Microcontroller Peripherals(帶閃存的現(xiàn)場(chǎng)可編程微控制器)
PSD813FN Field Programmble Microcontroller Peripherals(帶閃存的現(xiàn)場(chǎng)可編程微控制器)
PSD813FH Field Programmble Microcontroller Peripherals With Flash Memory(帶閃存的現(xiàn)場(chǎng)可編程微控制器)
PSD82 Three Phase Rectifier Bridges
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