參數(shù)資料
型號: PMN34UP
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: 20 V, 5 A P-channel Trench MOSFET
中文描述: 5000 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝: PLASTIC, SC-74, TSOP-6
文件頁數(shù): 7/15頁
文件大?。?/td> 811K
代理商: PMN34UP
PMN34UP
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 9 May 2011
7 of 15
NXP Semiconductors
PMN34UP
20 V, 5 A P-channel Trench MOSFET
V
DS
> I
D
× R
DSon
(1) T
j
= 25 °C
(2) T
j
= 150 °C
Fig 10. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
Fig 11. Normalized drain-source on-state resistance as
a function of junction temperature; typical
values
I
D
= -0.25 mA; V
DS
= V
GS
(1) maximum values
(2) typical values
(3) minimum values
f = 1 MHz; V
GS
= 0 V
(1) C
iss
(2) C
oss
(3) C
rss
Fig 13. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
Fig 12. Gate-source threshold voltage as a function of
junction temperature
017aaa213
V
GS
(V)
0
–3
–2
–1
–8
–4
–12
–16
I
D
(A)
0
(2)
(1)
(2)
(1)
T
j
(°C)
–60
180
120
0
60
017aaa147
1.0
0.5
1.5
2.0
a
0.0
T
j
(°C)
–60
180
120
0
60
017aaa148
–0.4
–0.8
–1.2
V
GS(th)
(V)
0
(1)
(3)
(2)
017aaa149
V
DS
(V)
–10
–1
–10
2
–10
–1
10
10
2
10
3
10
4
C
(pF)
1
(1)
(3)
(2)
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