參數(shù)資料
型號(hào)： PMN34UP
廠商： NXP SEMICONDUCTORS
元件分類： 功率晶體管
英文描述： 20 V, 5 A P-channel Trench MOSFET
中文描述： 5000 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝： PLASTIC, SC-74, TSOP-6
文件頁(yè)數(shù)： 5/15頁(yè)
文件大小： 811K
代理商： PMN34UP
PMN34UP
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 9 May 2011
5 of 15
NXP Semiconductors
PMN34UP
20 V, 5 A P-channel Trench MOSFET
7.
Characteristics
Table 7.
Symbol
Static characteristics
V
(BR)DSS
Characteristics
Parameter
Conditions
Min
Typ
Max
Unit
drain-source
breakdown voltage
gate-source threshold
voltage
drain leakage current
I
D
= -250 μA; V
GS
= 0 V; T
j
= 25 °C
-20
-
-
V
V
GSth
I
D
= -250 μA; V
DS
= V
GS
; T
j
= 25 °C
-0.45
-0.7
-0.95
V
I
DSS
V
DS
= -20 V; V
GS
= 0 V; T
j
V
DS
= -20 V; V
GS
= 0 V; T
j
= 150 °C
V
GS
= -8 V; V
DS
= 0 V; T
j
= 25 °C
V
GS
= -4.5 V; I
D
= -2.4 A; T
j
= 25 °C
V
GS
= -4.5 V; I
D
= -2.4 A; T
j
= 150 °C
V
GS
= -2.5 V; I
D
= -2.0 A; T
j
= 25 °C
V
GS
= -1.8 V; I
D
= -1.8 A; T
j
= 25 °C
V
DS
= -5 V; I
D
= -2.4 A; T
j
= 25 °C
-
-
-
-
-
-
-
-
-
-
-
34
48
42
57
13
-1
-10
-100
40
55
48
66
-
μA
μA
nA
m
m
m
m
S
I
GSS
R
DSon
gate leakage current
drain-source on-state
resistance
g
fs
forward
transconductance
Dynamic characteristics
Q
G(tot)
Q
GS
Q
GD
C
iss
C
oss
C
rss
total gate charge
gate-source charge
gate-drain charge
input capacitance
output capacitance
reverse transfer
capacitance
turn-on delay time
rise time
turn-off delay time
fall time
V
DS
= -10 V; I
D
= -1 A; V
GS
= -4.5 V;
T
j
= 25 °C
-
-
-
-
-
-
15.5
2.5
2
1950
175
105
23
-
-
-
-
-
nC
nC
nC
pF
pF
pF
V
DS
= -10 V; f = 1 MHz; V
GS
= 0 V;
T
j
= 25 °C
t
d(on)
t
r
t
d(off)
t
f
Source-drain diode
V
SD
V
DS
= -10 V; V
GS
= -5 V; R
G(ext)
= 6
;
T
j
= 25 °C; I
D
= -1 A
-
-
-
-
13
21
95
33
-
-
-
-
ns
ns
ns
ns
source-drain voltage
I
S
= -2.4 A; V
GS
= 0 V; T
j
= 25 °C
-
-0.75
-1
V
相關(guān)PDF資料
PDF描述
PMP1400 Druck Industrial Pressure Sensors
PMU Precision Resistors
PMU-A-R010-1.0 Precision Resistors
PMU-A-R010-2.0 Precision Resistors
PMU-A-R010-5.0 Precision Resistors
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
PMN34UP,115 功能描述:MOSFET 20V 5 A P-CH TRENCH MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
PMN35EN 制造商:NXP Semiconductors 功能描述:MOSFET N CH 30V 5.1A SOT457 制造商:NXP Semiconductors 功能描述:MOSFET, N CH, 30V, 5.1A, SOT457 制造商:NXP Semiconductors 功能描述:MOSFET, N CH, 30V, 5.1A, SOT457; Transistor Polarity:N Channel; Continuous Drain Current Id:5.1A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.025ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.5V ;RoHS Compliant: Yes
PMN35EN,115 功能描述:MOSFET 30 V, 5.1 A N-CH TRENCH MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
PMN35EN,125 功能描述:MOSFET N-Chan 30V 5.1A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
PMN38EN 制造商:NXP Semiconductors 功能描述:MOSFETN CH30V5.4ASOT457 制造商:NXP Semiconductors 功能描述:MOSFET,N CH,30V,5.4A,SOT457
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*