參數(shù)資料
型號: PMN34UP
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: 20 V, 5 A P-channel Trench MOSFET
中文描述: 5000 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝: PLASTIC, SC-74, TSOP-6
文件頁數(shù): 6/15頁
文件大?。?/td> 811K
代理商: PMN34UP
PMN34UP
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 9 May 2011
6 of 15
NXP Semiconductors
PMN34UP
20 V, 5 A P-channel Trench MOSFET
T
j
= 25 °C
T
j
= 25 °C; V
DS
= -3 V
(1) minimum values
(2) typical values
(3) maximum values
Fig 6.
Output characteristics: drain current as a
function of drain-source voltage; typical values
Fig 7.
Sub-threshold drain current as a function of
gate-source voltage
T
j
= 25 °C
(1) V
GS
= -1.5 V
(2) V
GS
= -1.8 V
(3) V
GS
= -2.0 V
(4) V
GS
= -2.5 V
(5) V
GS
= -4.5 V
Drain-source on-state resistance as a function
of drain current; typical values
I
D
= -2.4 A
(1) T
j
= 150 °C
(2) T
j
= 25 °C
Fig 8.
Fig 9.
Drain-source on-state resistance as a function
of gate-source voltage; typical values
V
DS
(V)
0
–5
–4
–2
–3
–1
017aaa211
–8
–4
–12
–16
I
D
(A)
0
–2 V
V
GS
= –1.8 V
–1.5 V
–2.5 V
–4.5 V
017aaa143
–10
–4
–10
–5
–10
–3
I
D
(A)
–10
–6
V
GS
(V)
–0.2
–1.0
–0.8
–0.4
–0.6
(1)
(3)
(2)
I
D
(A)
0
–16
–12
–4
–8
017aaa212
0.04
0.06
0.02
0.08
0.10
R
DSon
(Ω)
0.00
(1)
(3)
(2)
(4)
(5)
V
GS
(V)
0.0
–5.0
–4.0
–2.0
–3.0
–1.0
017aaa145
0.10
0.05
0.15
0.20
R
DSon
(Ω)
0.00
(1)
(2)
相關(guān)PDF資料
PDF描述
PMP1400 Druck Industrial Pressure Sensors
PMU Precision Resistors
PMU-A-R010-1.0 Precision Resistors
PMU-A-R010-2.0 Precision Resistors
PMU-A-R010-5.0 Precision Resistors
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
PMN34UP,115 功能描述:MOSFET 20V 5 A P-CH TRENCH MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
PMN35EN 制造商:NXP Semiconductors 功能描述:MOSFET N CH 30V 5.1A SOT457 制造商:NXP Semiconductors 功能描述:MOSFET, N CH, 30V, 5.1A, SOT457 制造商:NXP Semiconductors 功能描述:MOSFET, N CH, 30V, 5.1A, SOT457; Transistor Polarity:N Channel; Continuous Drain Current Id:5.1A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.025ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.5V ;RoHS Compliant: Yes
PMN35EN,115 功能描述:MOSFET 30 V, 5.1 A N-CH TRENCH MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
PMN35EN,125 功能描述:MOSFET N-Chan 30V 5.1A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
PMN38EN 制造商:NXP Semiconductors 功能描述:MOSFETN CH30V5.4ASOT457 制造商:NXP Semiconductors 功能描述:MOSFET,N CH,30V,5.4A,SOT457