參數(shù)資料
型號： PMN34UP
廠商： NXP SEMICONDUCTORS
元件分類： 功率晶體管
英文描述： 20 V, 5 A P-channel Trench MOSFET
中文描述： 5000 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝： PLASTIC, SC-74, TSOP-6
文件頁數(shù)： 4/15頁
文件大?。?/td> 811K
代理商： PMN34UP
PMN34UP
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 9 May 2011
4 of 15
NXP Semiconductors
PMN34UP
20 V, 5 A P-channel Trench MOSFET
6.
Thermal characteristics
[1]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm
2
.
Table 6.
Symbol
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance
from junction to
ambient
thermal resistance
from junction to solder
point
Conditions
in free air
Min
-
-
Typ
200
78
Max
230
90
Unit
K/W
K/W
[1]
[2]
R
th(j-sp)
-
15
20
K/W
FR4 PCB, standard footprint
Fig 4.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
FR4 PCB, mounting pad for drain 6 cm
2
Fig 5.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
017aaa209
t
p
(s)
10
–3
10
2
10
3
10
1
10
–2
10
–1
10
2
10
10
3
Z
th(j-a)
(K/W)
1
duty cycle = 1
0.75
0.5
0.33
0.2
0.25
0.1
0.05
0.02
0.01
0
017aaa210
t
p
(s)
10
–3
10
2
10
3
10
1
10
–2
10
–1
10
2
10
10
3
Z
th(j-a)
(K/W)
1
duty cycle = 1
0.75
0.5
0.33
0.2
0.25
0.1
0.05
0.02
0.01
0
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參數(shù)描述
PMN34UP,115 功能描述:MOSFET 20V 5 A P-CH TRENCH MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
PMN35EN 制造商:NXP Semiconductors 功能描述:MOSFET N CH 30V 5.1A SOT457 制造商:NXP Semiconductors 功能描述:MOSFET, N CH, 30V, 5.1A, SOT457 制造商:NXP Semiconductors 功能描述:MOSFET, N CH, 30V, 5.1A, SOT457; Transistor Polarity:N Channel; Continuous Drain Current Id:5.1A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.025ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.5V ;RoHS Compliant: Yes
PMN35EN,115 功能描述:MOSFET 30 V, 5.1 A N-CH TRENCH MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
PMN35EN,125 功能描述:MOSFET N-Chan 30V 5.1A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
PMN38EN 制造商:NXP Semiconductors 功能描述:MOSFETN CH30V5.4ASOT457 制造商:NXP Semiconductors 功能描述:MOSFET,N CH,30V,5.4A,SOT457
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