參數(shù)資料
型號： PMN34UP
廠商： NXP SEMICONDUCTORS
元件分類： 功率晶體管
英文描述： 20 V, 5 A P-channel Trench MOSFET
中文描述： 5000 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝： PLASTIC, SC-74, TSOP-6
文件頁數(shù)： 1/15頁
文件大小： 811K
代理商： PMN34UP
1.
Product profile
1.1 General description
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74)
Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.2 Features and benefits
1.8 V R
DSon
rated
Very fast switching
Trench MOSFET technology
1.3 Applications
Relay driver
High-speed line driver
High-side loadswitch
Switching circuits
1.4 Quick reference data
[1]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm
2
.
2.
Pinning information
PMN34UP
20 V, 5 A P-channel Trench MOSFET
Rev. 1 — 9 May 2011
Product data sheet
ST5
Table 1.
Symbol
V
DS
V
GS
I
D
Static characteristics
R
DSon
Quick reference data
Parameter
drain-source voltage
gate-source voltage
drain current
Conditions
T
j
= 25 °C
Min
-
-8
-
Typ
-
-
-
Max
-20
8
-5
Unit
V
V
A
V
GS
= -4.5 V; T
amb
= 25 °C
[1]
drain-source on-state
resistance
V
GS
= -4.5 V; I
D
= -2.4 A; T
j
= 25 °C
-
34
40
m
Table 2.
Pin
1
2
3
4
5
6
Pinning information
Symbol
Description
D
drain
D
drain
G
gate
S
source
D
drain
D
drain
Simplified outline
Graphic symbol
SOT457 (TSOP6)
1
3
2
4
5
6
017aaa094
S
D
G
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
PMN34UP,115 功能描述:MOSFET 20V 5 A P-CH TRENCH MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
PMN35EN 制造商:NXP Semiconductors 功能描述:MOSFET N CH 30V 5.1A SOT457 制造商:NXP Semiconductors 功能描述:MOSFET, N CH, 30V, 5.1A, SOT457 制造商:NXP Semiconductors 功能描述:MOSFET, N CH, 30V, 5.1A, SOT457; Transistor Polarity:N Channel; Continuous Drain Current Id:5.1A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.025ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.5V ;RoHS Compliant: Yes
PMN35EN,115 功能描述:MOSFET 30 V, 5.1 A N-CH TRENCH MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
PMN35EN,125 功能描述:MOSFET N-Chan 30V 5.1A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
PMN38EN 制造商:NXP Semiconductors 功能描述:MOSFETN CH30V5.4ASOT457 制造商:NXP Semiconductors 功能描述:MOSFET,N CH,30V,5.4A,SOT457
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