參數(shù)資料
型號： PIC18LF96J65-I/PT
廠商： Microchip Technology
文件頁數(shù)： 14/131頁
文件大?。?/td> 0K
描述： IC PIC MCU FLASH 48KX16 100TQFP
標(biāo)準(zhǔn)包裝： 90
系列： PIC® 18F
核心處理器： PIC
芯體尺寸： 8-位
速度： 41.667MHz
連通性： EBI/EMI，以太網(wǎng)，I²C，SPI，UART/USART
外圍設(shè)備： 欠壓檢測/復(fù)位，POR，PWM，WDT
輸入/輸出數(shù)： 70
程序存儲器容量： 96KB（48K x 16）
程序存儲器類型： 閃存
RAM 容量： 3808 x 8
電壓 - 電源 (Vcc/Vdd)： 2 V ~ 3.6 V
數(shù)據(jù)轉(zhuǎn)換器： A/D 16x10b
振蕩器型： 內(nèi)部
工作溫度： -40°C ~ 85°C
封裝/外殼： 100-TQFP
包裝： 托盤
PIC18F97J60 FAMILY
DS39762F-page 110
2011 Microchip Technology Inc.
7.4
Erasing Flash Program Memory
The minimum erase block is 1024 bytes. Only through
the use of an external programmer, or through ICSP
control, can larger blocks of program memory be Bulk
Erased. Word Erase in the Flash array is not supported.
When initiating an erase sequence from the micro-
controller itself, a block of 1024 bytes of program
memory is erased. The Most Significant 11 bits of the
TBLPTR<20:10> point to the block being erased.
TBLPTR<9:0> are ignored.
The EECON1 register commands the erase operation.
The WREN bit must be set to enable write operations.
The FREE bit is set to select an erase operation.
For protection, the write initiate sequence for EECON2
must be used.
A long write is necessary for erasing the internal
Flash. Instruction execution is halted while in a long
write cycle. The long write will be terminated by the
internal programming timer. An on-chip timer controls
the erase time. The write/erase voltages are
generated by an on-chip charge pump, rated to
operate over most of the voltage range of the device.
See Parameter D132B (VPEW) for specific lim
its.
7.4.1
FLASH PROGRAM MEMORY
ERASE SEQUENCE
The sequence of events for erasing a block of internal
program memory location is:
1.
Load Table Pointer register with the address of
row being erased.
2.
Set the EECON1 register for the erase operation:
set WREN bit to enable writes;
set FREE bit to enable the erase.
3.
Disable interrupts.
4.
Write 55h to EECON2.
5.
Write 0AAh to EECON2.
6.
Set the WR bit. This will begin the Row Erase
cycle.
7.
The CPU will stall for the duration of the erase.
8.
Re-enable interrupts.
EXAMPLE 7-2:
ERASING A FLASH PROGRAM MEMORY ROW
MOVLW
CODE_ADDR_UPPER
; load TBLPTR with the base
MOVWF
TBLPTRU
; address of the memory block
MOVLW
CODE_ADDR_HIGH
MOVWF
TBLPTRH
MOVLW
CODE_ADDR_LOW
MOVWF
TBLPTRL
ERASE_ROW
BSF
EECON1, WREN
; enable write to memory
BSF
EECON1, FREE
; enable Row Erase operation
BCF
INTCON, GIE
; disable interrupts
Required
MOVLW
55h
Sequence
MOVWF
EECON2
; write 55h
MOVLW
0AAh
MOVWF
EECON2
; write 0AAh
BSF
EECON1, WR
; start erase (CPU stall)
BSF
INTCON, GIE
; re-enable interrupts
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