參數(shù)資料
型號: PHX18NQ11
廠商: NXP Semiconductors N.V.
英文描述: N-channel TrenchMOS standard level FET
中文描述: N溝道TrenchMOS標(biāo)準(zhǔn)電平場效應(yīng)管
文件頁數(shù): 8/12頁
文件大?。?/td> 94K
代理商: PHX18NQ11
Philips Semiconductors
PHX18NQ11T
N-channel TrenchMOS standard level FET
Product data
Rev. 01 — 13 February 2004
8 of 12
9397 750 12915
Koninklijke Philips Electronics N.V. 2004. All rights reserved.
7.
Isolation characteristics
T
j
= 25
°
C and 150
°
C; V
GS
= 0 V
Fig 12. Source (diode forward) current as a function of
source-drain (diode forward) voltage; typical
values.
I
D
= 3 A; V
DD
= 20 V and 80 V
Fig 13. Gate-source voltage as a function of gate
charge; typical values.
03am66
0
4
8
12
0
0.3
0.6
0.9
1.2
VSD (V)
IS
(A)
Tj = 25
°
C
150
°
C
VGS = 0 V
03am68
0
2
4
6
8
10
0
5
10
15
20
25
QG (nC)
VGS
(V)
ID = 3 A
Tj = 25
°
C
20 V
VDD = 80 V
Table 6:
Symbol
V
(isol)RMS
Isolation characteristics
Parameter
RMS isolation voltage from all three
terminals to external heatsink
Capacitance from drain to external
heatsink
Conditions
f = 50-60 Hz; sinusoidal waveform;
RH
65 %; clean and dust-free.
Min.
-
Typ.
-
Max.
2500
Unit
V
C
(d-h)
-
10
-
pF
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PHX18NQ11T 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel TrenchMOS standard level FET
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PHX18NQ20T 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel enhancement mode field-effect transistor
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PHX1N40 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor