參數(shù)資料
型號(hào)： PHX18NQ11
廠商： NXP Semiconductors N.V.
英文描述： N-channel TrenchMOS standard level FET
中文描述： N溝道TrenchMOS標(biāo)準(zhǔn)電平場(chǎng)效應(yīng)管
文件頁(yè)數(shù)： 2/12頁(yè)
文件大?。?/td> 94K
代理商： PHX18NQ11
Philips Semiconductors
PHX18NQ11T
N-channel TrenchMOS standard level FET
Product data
Rev. 01 — 13 February 2004
2 of 12
9397 750 12915
Koninklijke Philips Electronics N.V. 2004. All rights reserved.
3.
Ordering information
4.
Limiting values
[1]
External heatsink connected to mounting base.
Table 2:
Type number
Ordering information
Package
Name
TO-220F
Description
Plastic single-ended package; isolated heatsink mounted; 1 mounting hole;
3 lead TO-220AB ‘full pack’
Version
SOT186A
PHX18NQ11T
Table 3:
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
V
DS
drain-source voltage (DC)
V
DGR
drain-gate voltage (DC)
V
GS
gate-source voltage (DC)
I
D
drain current (DC)
Limiting values
Conditions
25
°
C
≤
T
j
≤
150
°
C
25
°
C
≤
T
j
≤
150
°
C; R
GS
= 20 k
Min
-
-
-
Max
110
110
±
20
12.5
7.9
50.2
31.2
+150
+150
Unit
V
V
V
A
A
A
W
°
C
°
C
T
h
= 25
°
C; V
GS
= 10 V;
Figure 2
and
3
T
h
= 100
°
C; V
GS
= 10 V
Figure 2
T
h
= 25
°
C; pulsed; t
p
≤
10
μ
s;
Figure 3
T
h
= 25
°
C;
Figure 1
[1]
-
[1]
-
I
DM
P
tot
T
stg
T
j
Source-drain diode
I
S
source (diode forward) current (DC)
I
SM
peak source (diode forward) current T
h
= 25
°
C; pulsed; t
p
≤
10
μ
s
Avalanche ruggedness
E
DS(AL)S
non-repetitive drain-source
avalanche energy
peak drain current
total power dissipation
storage temperature
junction temperature
[1]
-
[1]
-
55
55
T
h
= 25
°
C
[1]
-
12.5
50.2
A
A
[1]
-
unclamped inductive load; I
D
= 7.5 A;
t
p
= 0.09 ms; V
DD
≤
15 V; R
GS
= 50
;
V
GS
= 10 V; starting T
j
= 25
°
C
-
56
mJ
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PHX18NQ11T N-channel TrenchMOS standard level FET
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
PHX18NQ11T 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel TrenchMOS standard level FET
PHX18NQ11T,127 功能描述:MOSFET TRENCH-100 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
PHX18NQ20T 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel enhancement mode field-effect transistor
PHX18NQ20T,127 功能描述:MOSFET RAIL PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
PHX1N40 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor
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