參數(shù)資料
型號： PHX18NQ11
廠商： NXP Semiconductors N.V.
英文描述： N-channel TrenchMOS standard level FET
中文描述： N溝道TrenchMOS標準電平場效應管
文件頁數(shù)： 6/12頁
文件大小： 94K
代理商： PHX18NQ11
Philips Semiconductors
PHX18NQ11T
N-channel TrenchMOS standard level FET
Product data
Rev. 01 — 13 February 2004
6 of 12
9397 750 12915
Koninklijke Philips Electronics N.V. 2004. All rights reserved.
T
j
= 25
°
C
Output characteristics: drain current as a
function of drain-source voltage; typical values.
T
j
= 25
°
C and 150
°
C; V
DS
>
I
D
×
R
DSon
Fig 6.
Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
Fig 5.
T
j
= 25
°
C
Fig 7.
Drain-source on-state resistance as a function
of drain current; typical values.
Fig 8.
Normalized drain-source on-state resistance
factor as a function of junction temperature.
03am63
0
4
8
12
0
0.5
1
1.5
2
VDS (V)
ID
(A)
4.6 V
4.4 V
Tj = 25
°
C
10 V
4.8 V
5 V
5.2 V
5.4 V
6 V
03am65
0
4
8
12
0
2
4
6
VGS (V)
ID
(A)
Tj = 25
°
C
150
°
C
03am64
0
0.05
0.1
0.15
0.2
0
4
8
12
ID (A)
RDSon
(
)
10 V
Tj = 25
°
C
6 V
5.2 V
5.4 V
5 V
VGS = 4.8 V
03aa29
0
1
2
3
-60
0
60
120
180
Tj (
°
C)
a
a
R
R
DSon 25 C
)
----------------------------
=
相關(guān)PDF資料
PDF描述
PHX18NQ11T N-channel TrenchMOS standard level FET
PHX18NQ20T N-channel enhancement mode field-effect transistor
PHX1N40E Circular Connector; Body Material:Aluminum Alloy; Series:KPT00; No. of Contacts:39; Connector Shell Size:20; Connecting Termination:Solder; Circular Shell Style:Wall Mount Receptacle; Circular Contact Gender:Socket RoHS Compliant: No
PHX1N40 Circular Connector; Body Material:Aluminum Alloy; Series:KPT00; No. of Contacts:39; Connector Shell Size:20; Connecting Termination:Solder; Circular Shell Style:Wall Mount Receptacle; Circular Contact Gender:Pin RoHS Compliant: No
PHX1N50E Circular Connector; Body Material:Aluminum Alloy; Series:KPT00; No. of Contacts:41; Connector Shell Size:20; Connecting Termination:Solder; Circular Shell Style:Wall Mount Receptacle; Circular Contact Gender:Pin RoHS Compliant: No
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
PHX18NQ11T 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel TrenchMOS standard level FET
PHX18NQ11T,127 功能描述:MOSFET TRENCH-100 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
PHX18NQ20T 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel enhancement mode field-effect transistor
PHX18NQ20T,127 功能描述:MOSFET RAIL PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
PHX1N40 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor
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