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參數(shù)資料
| 型號： | PHT11N06 |
| 廠商： | NXP Semiconductors N.V. |
| 英文描述： | TrenchMOS transistor Logic level FET |
| 中文描述： | TrenchMOS晶體管邏輯電平場效應(yīng)管 |
| 文件頁數(shù)： | 1/9頁 |
| 文件大小： | 69K |
| 代理商： | PHT11N06 |
Philips Semiconductors
Product specification
TrenchMOS
transistor
Logic level FET
PHT11N06LT
GENERAL DESCRIPTION
QUICK REFERENCE DATA
N-channel enhancement mode
logic level field-effect power
transistor in a plastic envelope
suitable for surface mounting.
The device features very low
on-state resistance and has
integral zener diodes giving
ESDprotection.Itisintendedfor
use in DC-DC converters and
general
purpose
applications.
SYMBOL
PARAMETER
MAX.
UNIT
V
DS
I
D
Drain-source voltage
Drain current (DC) T
sp
= 25 C
Drain current (DC) T
amb
= 25 C
Total power dissipation
Junction temperature
Drain-source on-state
resistance
55
10.7
4.9
8.3
150
40
V
A
A
W
C
m
P
tot
T
j
R
DS(ON)
V
GS
= 5 V
switching
PINNING - SOT223
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
gate
2
drain
3
source
4
drain (tab)
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL
V
DS
V
DGR
±
V
GS
I
D
PARAMETER
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Drain current (DC)
CONDITIONS
-
R
GS
= 20 k
-
T
sp
= 25 C
T
amb
= 25 C
T
sp
= 100 C
T
amb
= 100 C
T
sp
= 25 C
T
amb
= 25 C
T
sp
= 25 C
T
amb
= 25 C
-
MIN.
-
-
-
-
-
-
-
-
-
-
-
- 55
MAX.
55
55
13
10.7
4.9
7.5
3.4
42
19
8.3
1.8
150
UNIT
V
V
V
A
A
A
A
A
A
W
W
C
I
D
Drain current (DC)
I
DM
Drain current (pulse peak value)
P
tot
Total power dissipation
T
stg
, T
j
Storage & operating temperature
ESD LIMITING VALUE
SYMBOL
V
C
PARAMETER
Electrostatic discharge capacitor
voltage
CONDITIONS
Human body model
(100 pF, 1.5 k
)
MIN.
-
MAX.
2
UNIT
kV
d
g
s
4
1
2
3
January 1998
1
Rev 1.100
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| PHT11N06LT | TrenchMOS transistor Logic level FET |
| PHT11N06T | TrenchMOS transistor Standard level FET |
| PHT6N03LT | TrenchMOS transistor Logic level FET |
| PHT6N03T | TrenchMOS transistor Standard level FET |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PHT11N06LT | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:TrenchMOS transistor Logic level FET |
| PHT11N06LT /T3 | 功能描述:MOSFET TAPE13 PWRMOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| PHT11N06LT,135 | 功能描述:MOSFET TAPE13 PWRMOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| PHT11N06LT/T3 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR SMD UNIVERSAL MOSFET SOT |
| PHT11N06LTT/R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 4.9A I(D) | SOT-223 |
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