- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄382393 > PHT6N03LT (NXP SEMICONDUCTORS) TrenchMOS transistor Logic level FET PDF資料下載
參數(shù)資料
| 型號： | PHT6N03LT |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | TrenchMOS transistor Logic level FET |
| 中文描述： | 5.9 A, 30 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | SOT-223, 4 PIN |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 53K |
| 代理商： | PHT6N03LT |
Philips Semiconductors
Product specification
TrenchMOS
transistor
Logic level FET
PHT6N03LT
FEATURES
SYMBOL
QUICK REFERENCE DATA
V
DSS
= 30 V
’Trench’
technology
Very low on-state resistance
Fast switching
Stable off-state characteristics
High thermal cycling performance
Surface mounting package
I
D
= 5.9 A
R
DS(ON)
≤
30 m
(V
GS
= 5 V)
R
DS(ON)
≤
28 m
(V
GS
= 10 V)
GENERAL DESCRIPTION
PINNING
SOT223
N-channel
logic
transistor
technology. The device has very
low
on-state
resistance.
intended for use in dc to dc
converters and general purpose
switching applications.
enhancement
field-effect
using
mode
power
’
trench
’
PIN
DESCRIPTION
level
1
gate
It
is
2
drain
3
source
tab
drain
The PHT6N03LT is supplied in the
SOT223
surface
package.
mounting
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
V
DSS
Drain-source voltage
V
DGR
Drain-gate voltage
V
GS
Gate-source voltage
I
D
Continuous drain current
CONDITIONS
T
j
= 25 C to 150C
T
j
= 25 C to 150C; R
GS
= 20 k
MIN.
-
-
-
-
-
-
-
- 55
MAX.
30
30
±
13
5.9
4.1
23.6
1.8
150
UNIT
V
V
V
A
A
A
W
C
T
amb
= 25 C; V
GS
= 10 V
T
amb
= 100 C; V
GS
= 10 V
I
DM
P
D
T
j
, T
stg
Pulsed drain current
Total power dissipation
Operating junction and
storage temperature
T
amb
= 25 C
ESD LIMITING VALUE
SYMBOL PARAMETER
V
C
Electrostatic discharge
capacitor voltage, all pins
CONDITIONS
Human body model (100 pF, 1.5 k
)
MIN.
-
MAX.
2
UNIT
kV
THERMAL RESISTANCES
SYMBOL PARAMETER
R
th j-sp
Thermal resistance junction
to solder point
R
th j-a
Thermal resistance junction
to ambient
CONDITIONS
mounted on any pcb
MIN.
-
TYP. MAX. UNIT
-
15
K/W
mounted on test pcb of fig:17
-
70
-
K/W
d
g
s
4
1
2
3
January 1998
1
Rev 1.300
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| PHT6N03T | TrenchMOS transistor Standard level FET |
| PHT6N06 | TrenchMOS transistor Standard level FET |
| PHU2N50E | PowerMOS transistors Avalanche energy rated |
| PHW11N50E | PowerMOS transistors Avalanche energy rated |
| PHB11N50E | PowerMOS transistors Avalanche energy rated |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PHT6N03LTT/R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 12.8A I(D) | SOT-223 |
| PHT6N03T | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:TrenchMOS transistor Standard level FET |
| PHT6N03TT/R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 12.8A I(D) | SOT-223 |
| PHT6N06 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:TrenchMOS transistor Standard level FET |
| PHT6N06LT | 制造商:NXP Semiconductors 功能描述:MOSFET N SOT-223 制造商:NXP Semiconductors 功能描述:MOSFET, N, SOT-223 制造商:NXP Semiconductors 功能描述:MOSFET N-Channel 55V 5.5A SOT223 |
發(fā)布緊急采購，3分鐘左右您將得到回復。