- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄382393 > PHT11N06T (NXP SEMICONDUCTORS) TrenchMOS transistor Standard level FET PDF資料下載
參數(shù)資料
| 型號(hào)： | PHT11N06T |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | TrenchMOS transistor Standard level FET |
| 中文描述： | 4.9 A, 55 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLASTIC PACKAGE-4 |
| 文件頁數(shù)： | 1/9頁 |
| 文件大?。?/td> | 69K |
| 代理商： | PHT11N06T |
Philips Semiconductors
Product specification
TrenchMOS
transistor
Logic level FET
PHT11N06LT
GENERAL DESCRIPTION
QUICK REFERENCE DATA
N-channel enhancement mode
logic level field-effect power
transistor in a plastic envelope
suitable for surface mounting.
The device features very low
on-state resistance and has
integral zener diodes giving
ESDprotection.Itisintendedfor
use in DC-DC converters and
general
purpose
applications.
SYMBOL
PARAMETER
MAX.
UNIT
V
DS
I
D
Drain-source voltage
Drain current (DC) T
sp
= 25 C
Drain current (DC) T
amb
= 25 C
Total power dissipation
Junction temperature
Drain-source on-state
resistance
55
10.7
4.9
8.3
150
40
V
A
A
W
C
m
P
tot
T
j
R
DS(ON)
V
GS
= 5 V
switching
PINNING - SOT223
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
gate
2
drain
3
source
4
drain (tab)
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL
V
DS
V
DGR
±
V
GS
I
D
PARAMETER
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Drain current (DC)
CONDITIONS
-
R
GS
= 20 k
-
T
sp
= 25 C
T
amb
= 25 C
T
sp
= 100 C
T
amb
= 100 C
T
sp
= 25 C
T
amb
= 25 C
T
sp
= 25 C
T
amb
= 25 C
-
MIN.
-
-
-
-
-
-
-
-
-
-
-
- 55
MAX.
55
55
13
10.7
4.9
7.5
3.4
42
19
8.3
1.8
150
UNIT
V
V
V
A
A
A
A
A
A
W
W
C
I
D
Drain current (DC)
I
DM
Drain current (pulse peak value)
P
tot
Total power dissipation
T
stg
, T
j
Storage & operating temperature
ESD LIMITING VALUE
SYMBOL
V
C
PARAMETER
Electrostatic discharge capacitor
voltage
CONDITIONS
Human body model
(100 pF, 1.5 k
)
MIN.
-
MAX.
2
UNIT
kV
d
g
s
4
1
2
3
January 1998
1
Rev 1.100
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| PHT6N03LT | TrenchMOS transistor Logic level FET |
| PHT6N03T | TrenchMOS transistor Standard level FET |
| PHT6N06 | TrenchMOS transistor Standard level FET |
| PHU2N50E | PowerMOS transistors Avalanche energy rated |
| PHW11N50E | PowerMOS transistors Avalanche energy rated |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PHT11N06TT/R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 4.9A I(D) | SOT-223 |
| PHT-120-01-L-D | 制造商:Samtec Inc 功能描述:.100 PRESS FIT SOCKET ASSEMBLY - Bulk |
| PHT-120-01-L-S | 制造商:Samtec Inc 功能描述:.100 PRESS FIT SOCKET ASSEMBLY - Bulk |
| PHT-120-01-S-D | 制造商:Samtec Inc 功能描述:.100 PRESS FIT SOCKET ASSEMBLY - Bulk |
| PHT-120-02-L-D | 制造商:Samtec Inc 功能描述:.100 PRESS FIT SOCKET ASSEMBLY - Bulk |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。