參數(shù)資料
型號(hào): PHN110
廠商: NXP SEMICONDUCTORS
元件分類: JFETs
英文描述: N-channel enhancement mode MOS transistor
中文描述: 4 A, 30 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, MS-012AA
封裝: PLASTIC, SO-8
文件頁(yè)數(shù): 4/12頁(yè)
文件大?。?/td> 79K
代理商: PHN110
1997 Jun 17
4
Philips Semiconductors
Product specification
N-channel enhancement mode
MOS transistor
PHN110
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
VALUE
UNIT
R
th j-s
thermal resistance from junction to soldering point
25
K/W
Fig.4 Transient thermal resistance from junction to soldering point as a function of pulse time; typical values.
handbook, full pagewidth
2
10
1
10
6
10
5
10
4
10
3
10
2
10
1
1
tp (s)
10
1
MBG749
Rth j
s
(K/W)
tp
T
P
t
tp
T
δ
=
δ
=
0.75
0.5
0.1
0
0.05
0.33
0.01
0.02
0.2
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