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參數(shù)資料
| 型號(hào)： | PHM21NQ15T |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | TrenchMOS standard level FET |
| 中文描述： | 22.2 A, 150 V, 0.055 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | 6 X 5 MM, 0.85 MM HEIGHT, PLASTIC, QLPAK, HVSON-8 |
| 文件頁數(shù)： | 6/13頁 |
| 文件大小： | 279K |
| 代理商： | PHM21NQ15T |
Philips Semiconductors
PHM21NQ15T
TrenchMOS standard level FET
Product data
Rev. 02 — 11 September 2003
6 of 13
9397 750 11844
Koninklijke Philips Electronics N.V. 2003. All rights reserved.
T
j
= 25
°
C
Output characteristics: drain current as a
function of drain-source voltage; typical values.
T
j
= 25
°
C and 150
°
C; V
DS
>
I
D
×
R
DSon
Fig 6.
Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
Fig 5.
T
j
= 25
°
C
Fig 7.
Drain-source on-state resistance as a function
of drain current; typical values.
Fig 8.
Normalized drain-source on-state resistance
factor as a function of junction temperature.
03al07
0
20
40
60
0
1
2
3
4
5
VDS (V)
ID
(A)
4.3 V
Tj = 25
°
C
VGS = 3.7 V
10 V
4.7 V
4.5 V
4.9 V
5 V
6 V
4.1 V
3.9 V
03al09
0
20
40
60
0
2
4
6
VGS (V)
ID
(A)
VDS > ID x RDSon
Tj = 25
°
C
150
°
C
03al08
0
20
40
60
80
0
20
40
60
ID (A)
RDSon
(m
)
6 V
VGS = 4.7 V
Tj = 25
°
C
4.9 V
10 V
5 V
03al51
0
0.5
1
1.5
2
2.5
-60
0
60
120
180
Tj (
°
C)
a
a
R
R
DSon 25 C
)
----------------------------
=
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