參數(shù)資料
型號(hào)： PHM21NQ15T
廠商： NXP SEMICONDUCTORS
元件分類： JFETs
英文描述： TrenchMOS standard level FET
中文描述： 22.2 A, 150 V, 0.055 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： 6 X 5 MM, 0.85 MM HEIGHT, PLASTIC, QLPAK, HVSON-8
文件頁數(shù)： 2/13頁
文件大?。?/td> 279K
代理商： PHM21NQ15T
Philips Semiconductors
PHM21NQ15T
TrenchMOS standard level FET
Product data
Rev. 02 — 11 September 2003
2 of 13
9397 750 11844
Koninklijke Philips Electronics N.V. 2003. All rights reserved.
3.
Ordering information
4.
Limiting values
[1]
[2]
Duty cycle limited by maximum junction temperature.
Repetitive avalanche failure is not determined simply by thermal effects. Repetitive avalanche transients should only be applied for short
bursts, not every switching cycle.
Table 2:
Type number
Ordering information
Package
Name
QLPAK
Description
Plastic surface mounted package; no leads; 8 terminals
Version
SOT685
PHM21NQ15T
Table 3:
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
V
DS
drain-source voltage (DC)
V
DGR
drain-gate voltage (DC)
V
GS
gate-source voltage (DC)
I
D
drain current (DC)
Limiting values
Conditions
25
°
C
≤
T
j
≤
150
°
C
25
°
C
≤
T
j
≤
150
°
C; R
GS
= 20 k
Min
-
-
-
-
-
-
-
55
55
Max
150
150
±
20
22.2
14
60
62.5
+150
+150
Unit
V
V
V
A
A
A
W
°
C
°
C
T
mb
= 25
°
C; V
GS
= 10 V;
Figure 2
and
3
T
mb
= 100
°
C; V
GS
= 10 V;
Figure 2
T
mb
= 25
°
C; pulsed; t
p
≤
10
μ
s;
Figure 3
T
mb
= 25
°
C;
Figure 1
I
DM
P
tot
T
stg
T
j
Source-drain diode
I
S
source (diode forward) current (DC)
I
SM
peak source (diode forward) current T
mb
= 25
°
C; pulsed; t
p
≤
10
μ
s
Avalanche ruggedness
E
DS(AL)S
non-repetitive drain-source
avalanche energy
peak drain current
total power dissipation
storage temperature
junction temperature
T
mb
= 25
°
C
-
-
22.2
60
A
A
unclamped inductive load; I
D
= 12 A;
t
p
= 0.21 ms; V
DD
≤
150 V; R
GS
= 50
;
V
GS
= 10 V; starting T
j
= 25
°
C
unclamped inductive load;
I
D
= 1.2 A; t
p
= 0.021 ms; V
DD
≤
100 V;
R
GS
= 50
; V
GS
= 10 V
-
250
mJ
E
DS(AL)R
repetitive drain-source avalanche
energy
[1]
[2]
-
2.5
mJ
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