參數(shù)資料
型號： PHB38N02LT
廠商： NXP SEMICONDUCTORS
元件分類： JFETs
英文描述： TrenchMOS logic level FET
中文描述： 44.7 A, 20 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： PLASTIC, D2PAK-3
文件頁數(shù)： 5/13頁
文件大?。?/td> 252K
代理商： PHB38N02LT
Philips Semiconductors
PHB/PHD38N02LT
TrenchMOS logic level FET
Product data
Rev. 01 — 30 June 2003
5 of 13
9397 750 11614
Koninklijke Philips Electronics N.V. 2003. All rights reserved.
5.
Characteristics
Table 4:
T
j
= 25
°
C unless otherwise specified.
Symbol Parameter
Static characteristics
V
(BR)DSS
drain-source breakdown voltage
Characteristics
Conditions
Min
Typ
Max
Unit
I
D
= 250
μ
A; V
GS
= 0 V
T
j
= 25
°
C
T
j
=
55
°
C
I
D
= 250
μ
A; V
DS
= V
GS
;
Figure 9
T
j
= 25
°
C
T
j
= 175
°
C
T
j
=
55
°
C
V
DS
= 20 V; V
GS
= 0 V
T
j
= 25
°
C
T
j
= 175
°
C
V
GS
=
±
12 V; V
DS
= 0 V
V
GS
= 5 V; I
D
= 25 A;
Figure 7
and
8
T
j
= 25
°
C
T
j
= 175
°
C
V
GS
= 2.5 V; I
D
= 8 A;
Figure 8
20
18
-
-
-
-
V
V
V
GS(th)
gate-source threshold voltage
0.5
0.3
-
1
-
-
1.5
-
1.8
V
V
V
I
DSS
drain-source leakage current
-
-
-
0.05
-
10
1
500
100
μ
A
μ
A
nA
I
GSS
R
DSon
gate-source leakage current
drain-source on-state resistance
-
-
-
13.5
24.3
20
16
28.8
30
m
m
m
Dynamic characteristics
Q
g(tot)
total gate charge
Q
gs
gate-source charge
Q
gd
gate-drain (Miller) charge
C
iss
input capacitance
C
oss
output capacitance
C
rss
reverse transfer capacitance
t
d(on)
turn-on delay time
t
r
rise time
t
d(off)
turn-off delay time
t
f
fall time
Source-drain diode
V
SD
source-drain (diode forward) voltage I
S
= 25 A; V
GS
= 0 V;
Figure 12
I
D
= 25 A; V
DD
= 10 V; V
GS
= 5 V;
Figure 13
-
-
-
-
-
-
-
-
-
-
15.1
4.5
4.2
800
260
190
4
12.5
30
23
-
-
-
-
-
-
-
-
-
-
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
V
GS
= 0 V; V
DS
= 20 V; f = 1 MHz;
Figure 11
V
DD
= 10 V; I
D
= 25 A; V
GS
= 10 V; R
G
= 5.6
-
0.98
1.2
V
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