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參數(shù)資料
| 型號： | PHB14NQ20T |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | TrenchMOS standard level FET |
| 中文描述： | 14 A, 200 V, 0.23 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLASTIC, D2PAK-3 |
| 文件頁數(shù)： | 6/14頁 |
| 文件大?。?/td> | 269K |
| 代理商： | PHB14NQ20T |
Philips Semiconductors
PHP/PHB/PHD14NQ20T
TrenchMOS standard level FET
Product data
Rev. 03 — 11 March 2002
6 of 14
9397 750 09535
Koninklijke Philips Electronics N.V. 2002. All rights reserved.
T
j
= 25
°
C
Output characteristics: drain current as a
function of drain-source voltage; typical values.
T
j
= 25
°
C and 175
°
C; V
DS
>
I
D
×
R
DSon
Fig 6.
Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
Fig 5.
T
j
= 25
°
C
Fig 7.
Drain-source on-state resistance as a function
of drain current; typical values.
Fig 8.
Normalized drain source on-state resistance
factor as a function of junction temperature.
6 V
5 V
VGS = 10 V
5.5 V
4.5 V
30
20
10
0
ID
(A)
10
8
6
4
2
0
VDS (V)
003aaa221
8
16
24
0
30
0
2
4
6
8
ID
(A)
Tj = 25
ο
C
Tj = 175
ο
C
VGS (V)
003aaa223
20
0
10
5
15
ID (A)
RDSon
(
)
0.8
0.6
0.4
0.2
0
VGS = 10 V
6 V
4.5 V
5 V
5.5 V
003aaa222
180
-60
1
1.5
2
2.5
3
0.5
20
100
a
Tj (
ο
C)
003aaa225
a
R
R
DSon 25
°
C
)
-----------------------------
=
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| PHB152NQ03LTA /T3 | 功能描述:MOSFET RAIL PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| PHB152NQ03LTA,118 | 功能描述:MOSFET RAIL PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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