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參數(shù)資料
| 型號： | PHB11N06LT |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | TrenchMOS transistor Logic level FET |
| 中文描述： | 10.3 A, 55 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLASTIC, D2PAK-3 |
| 文件頁數(shù)： | 4/9頁 |
| 文件大?。?/td> | 76K |
| 代理商： | PHB11N06LT |
Philips Semiconductors
Product specification
TrenchMOS
transistor
Logic level FET
PHB11N06LT, PHD11N06LT
Fig.1. Normalised power dissipation.
PD% = 100
P
D
/P
D 25 C
= f(T
mb
)
Fig.2. Normalised continuous drain current.
ID% = 100
I
D
/I
D 25 C
= f(T
mb
); conditions: V
GS
≥
5 V
Fig.3. Safe operating area. T
= 25 C
I
D
& I
DM
= f(V
DS
); I
DM
single pulse; parameter t
p
Fig.4. Transient thermal impedance.
Z
th j-mb
= f(t); parameter D = t
p
/T
Fig.5. Typical output characteristics, T
j
= 25 C
I
D
= f(V
DS
); parameter V
GS
Fig.6. Typical on-state resistance, T
j
= 25 C
R
DS(ON)
= f(I
D
); parameter V
GS
0
20
40
60
80
Tmb / C
100
120
140
160
180
PD%
Normalised Power Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
1us
10us
100us
1ms
10ms
0.1s
1s
10s
0.001
0.01
0.1
1
10
PHB11N06LT
pulse width, tp (s)
Transient thermal impedance, Zth j-mb (K/W)
D =
t
p
t
p
T
T
P
t
D
0
20
40
60
80
Tmb / C
100
120
140
160
180
ID%
Normalised Current Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
0
2
4
6
8
10
0
2
4
6
8
10
PHB11N06LT
VDS, Drain-Source voltage (Volts)
ID, Drain current (Amps)
VGS = 2.6 V
2.8 V
3 V
3.2 V
3.4 V
3.6 V
5 V
10 V
Tj = 25 C
1
10
100
0.1
1
10
100
DC
PHB11N06LT
VDS, Drain-source voltage (Volts)
ID, Drain current (Amps)
RDS(ON) = VDS/ID
100 us
1 ms
10 ms
10 us
tp =
0
2
4
6
8
10
0
0.1
0.2
0.3
0.4
0.5
VGS = 5 V
PHB11N06LT
ID, Drain current (Amps)
RDS(on), Drain-Source on resistance (Ohms)
2.6V
10 V
2.8V
3V
3.2V
3.4V
3.6V
Tj = 25 C
September 1998
4
Rev 1.000
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