參數(shù)資料
型號： PHB130N03T
廠商： NXP SEMICONDUCTORS
元件分類： JFETs
英文描述： TrenchMOS transistor Standard level FET
中文描述： 75 A, 30 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： PLASTIC PACKAGE-3
文件頁數(shù)： 1/8頁
文件大?。?/td> 65K
代理商： PHB130N03T
Philips Semiconductors
Product specification
TrenchMOS
transistor
Standard level FET
PHB130N03T
GENERAL DESCRIPTION
QUICK REFERENCE DATA
N-channel
standard level field-effect power
transistor
in
a
suitable for surface mounting using
’
trench
’ technology.
featuresverylow on-state resistance
and has integral zener diodes giving
ESD protection up to 2kV. It is
intended
for
use
converters and
switching applications.
enhancement
mode
SYMBOL
PARAMETER
MAX.
UNIT
plastic envelope
V
DS
I
D
P
tot
T
j
R
DS(ON)
Drain-source voltage
Drain current (DC)
1
Total power dissipation
Junction temperature
Drain-source on-state
resistance
30
75
188
175
6
V
A
W
C
m
The
device
V
GS
= 10 V
in
DC-DC
general purpose
PINNING - SOT404
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
gate
2
drain
3
source
mb
drain
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL
V
DS
V
DGR
±
V
GS
I
D
I
D
I
DM
P
tot
T
stg
, T
j
PARAMETER
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Drain current (DC)
1
Drain current (DC)
1
Drain current (pulse peak value)
Total power dissipation
Storage & operating temperature
CONDITIONS
-
R
GS
= 20 k
-
T
mb
= 25 C
T
mb
= 100 C
T
mb
= 25 C
T
mb
= 25 C
-
MIN.
-
-
-
-
-
-
-
- 55
MAX.
30
30
20
75
75
240
188
175
UNIT
V
V
V
A
A
A
W
C
THERMAL RESISTANCES
SYMBOL
R
th j-mb
PARAMETER
Thermal resistance junction to
mounting base
Thermal resistance junction to
ambient
CONDITIONS
-
TYP.
-
MAX.
0.8
UNIT
K/W
R
th j-a
minimum footprint, FR4
board
50
-
K/W
d
g
s
1
3
mb
2
1
Current limited by package to 75A from a theoretical value of 130A.
December 1997
1
Rev 1.200
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
PHB130N03TT/R 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 75A I(D) | SOT-404
PHB13N40E 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistors Avalanche energy rated
PHB143NQ04T /T3 功能描述:MOSFET TRENCHMOS (TM)FET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
PHB143NQ04T,118 功能描述:MOSFET TRENCHMOS (TM)FET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
PHB145NQ06T,118 功能描述:MOSFET TRENCHMOS (TM) FET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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