參數(shù)資料
型號(hào): PHB101NQ03LT
廠商: NXP SEMICONDUCTORS
元件分類: JFETs
英文描述: TrenchMOS⑩ logic level FET
中文描述: 75 A, 30 V, 0.007 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: PLASTIC, D2PAK-3
文件頁(yè)數(shù): 8/13頁(yè)
文件大?。?/td> 280K
代理商: PHB101NQ03LT
Philips Semiconductors
PHB/PHD101NQ03LT
TrenchMOS logic level FET
Product data
Rev. 02 — 25 February 2003
8 of 13
9397 750 10929
Koninklijke Philips Electronics N.V. 2003. All rights reserved.
T
j
= 25
°
C and 175
°
C; V
GS
= 0 V
Fig 12. Source (diode forward) current as a function of
source-drain (diode forward) voltage; typical
values.
I
D
= 50 A; V
DD
= 15 V
Fig 13. Gate-source voltage as a function of gate
charge; typical values.
03ai25
0
20
40
60
80
0
0.3
0.6
0.9
1.2
VSD (V)
IS
(A)
Tj = 25
°
C
175
°
C
VGS = 0 V
03ai27
0
2
4
6
8
10
0
10
20
30
40
50
QG (nC)
VGS
(V)
ID = 50 A
Tj
= 25
°
C
VDD = 15 V
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