參數(shù)資料
型號(hào): PHB101NQ03LT
廠商: NXP SEMICONDUCTORS
元件分類: JFETs
英文描述: TrenchMOS⑩ logic level FET
中文描述: 75 A, 30 V, 0.007 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: PLASTIC, D2PAK-3
文件頁(yè)數(shù): 11/13頁(yè)
文件大?。?/td> 280K
代理商: PHB101NQ03LT
Philips Semiconductors
PHB/PHD101NQ03LT
TrenchMOS logic level FET
Product data
Rev. 02 — 25 February 2003
11 of 13
9397 750 10929
Koninklijke Philips Electronics N.V. 2003. All rights reserved.
10. Revision history
Table 6:
Rev Date
02
Revision history
CPCN
20030225
Description
Product data (9397 750 10929)
Modifications:
Removal of PHP101NQ03LT (Now in separate data sheet).
Section 7 “Thermal characteristics”
Clarification of thermal resistance table.
Graphics updated to latest standard.
Product data (9397 750 09307); initial version
-
01
20020220
-
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參數(shù)描述
PHB101NQ04T 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel TrenchMOS standard level FET
PHB101NQ04T,118 功能描述:MOSFET N-CH TRENCH 40V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
PHB108NQ03LT 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:TrenchMOS logic level FET
PHB108NQ03LT /T3 功能描述:MOSFET TAPE13 PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
PHB108NQ03LT,118 功能描述:MOSFET TAPE13 PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube