參數(shù)資料
型號(hào): PH3230S
廠商: NXP SEMICONDUCTORS
元件分類: JFETs
英文描述: N-channel TrenchMOS⑩ logic level FET
中文描述: 100 A, 30 V, 0.0065 ohm, N-CHANNEL, Si, POWER, MOSFET, MO-235
封裝: PLASTIC, LFPAK-4
文件頁(yè)數(shù): 6/12頁(yè)
文件大?。?/td> 97K
代理商: PH3230S
Philips Semiconductors
PH3230S
N-channel TrenchMOS logic level FET
Product data
Rev. 03 — 02 March 2004
6 of 12
9397 750 12756
Koninklijke Philips Electronics N.V. 2004. All rights reserved.
T
j
= 25
°
C
Output characteristics: drain current as a
function of drain-source voltage; typical values.
T
j
= 25
°
C and 150
°
C; V
DS
>
I
D
×
R
DSon
Fig 6.
Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
Fig 5.
T
j
= 25
°
C
Fig 7.
Drain-source on-state resistance as a function
of drain current; typical values.
Fig 8.
Normalized drain-source on-state resistance
factor as a function of junction temperature.
03al33
0
25
50
75
100
0
0.5
1
1.5
2
VDS (V)
ID
(A)
4 V
VGS = 3.5 V
4.5 V
5 V
10 V
03al36
0
20
40
60
80
0
2
4
6
VGS (V)
ID
(A)
VDS > ID x RDSon
Tj = 25
°
C
150
°
C
03al34
0
2.5
5
7.5
10
0
25
50
75
100
ID (A)
RDSon
(m
)
VGS = 10 V
5 V
4.5 V
4 V
03al35
0
0.5
1
1.5
2
-60
0
60
120
180
Tj (
°
C)
a
a
R
----------------------------
R
DSon 25 C
)
=
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