參數(shù)資料
型號: PH3230S
廠商: NXP SEMICONDUCTORS
元件分類: JFETs
英文描述: N-channel TrenchMOS⑩ logic level FET
中文描述: 100 A, 30 V, 0.0065 ohm, N-CHANNEL, Si, POWER, MOSFET, MO-235
封裝: PLASTIC, LFPAK-4
文件頁數(shù): 3/12頁
文件大?。?/td> 97K
代理商: PH3230S
Philips Semiconductors
PH3230S
N-channel TrenchMOS logic level FET
Product data
Rev. 03 — 02 March 2004
3 of 12
9397 750 12756
Koninklijke Philips Electronics N.V. 2004. All rights reserved.
V
GS
10 V
Fig 1.
Normalized total power dissipation as a
function of mounting base temperature.
Fig 2.
Normalized continuous drain current as a
function of mounting base temperature.
T
mb
= 25
°
C; I
DM
is single pulse.
Fig 3.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
03ah31
0
40
80
120
0
50
100
150
200
Tmb (
°
C)
Pder
(%)
0
40
80
120
0
50
100
150
200
Tmb (
°
C)
Ider
(%)
003aaa629
P
der
P
P
tot 25 C
)
-----------------------
100
%
×
=
I
der
I
D 25 C
)
-------------------
100
%
×
=
03al32
1
10
102
103
10-1
1
10
102
VDS (V)
ID
(A)
DC
100 ms
10 ms
1 ms
tp = 10
μ
s
Limit RDSon = VDS / ID
100
μ
s
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