參數(shù)資料
型號： PH3230S
廠商： NXP SEMICONDUCTORS
元件分類： JFETs
英文描述： N-channel TrenchMOS⑩ logic level FET
中文描述： 100 A, 30 V, 0.0065 ohm, N-CHANNEL, Si, POWER, MOSFET, MO-235
封裝： PLASTIC, LFPAK-4
文件頁數(shù)： 2/12頁
文件大?。?/td> 97K
代理商： PH3230S
Philips Semiconductors
PH3230S
N-channel TrenchMOS logic level FET
Product data
Rev. 03 — 02 March 2004
2 of 12
9397 750 12756
Koninklijke Philips Electronics N.V. 2004. All rights reserved.
3.
Ordering information
4.
Limiting values
Table 2:
Type number
Ordering information
Package
Name
LFPAK
Description
Plastic single-ended surface mounted package, 4 leads
Version
SOT669
PH3230S
Table 3:
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
V
DS
drain-source voltage (DC)
V
GS
gate-source voltage (DC)
I
D
drain current (DC)
Limiting values
Conditions
25
°
C
≤
T
j
≤
150
°
C
Min
-
-
-
-
-
-
55
55
Max
30
±
20
100
63
300
62.5
+150
+150
Unit
V
V
A
A
A
W
°
C
°
C
T
mb
= 25
°
C; V
GS
= 10 V;
Figure 2
and
3
T
mb
= 100
°
C; V
GS
= 10 V;
Figure 2
T
mb
= 25
°
C; pulsed; t
p
≤
10
μ
s;
Figure 3
T
mb
= 25
°
C;
Figure 1
I
DM
P
tot
T
stg
T
j
Source-drain diode
I
S
source (diode forward) current (DC)
I
SM
peak source (diode forward) current T
mb
= 25
°
C; pulsed; t
p
≤
10
μ
s
Avalanche ruggedness
E
DS(AL)R
repetitive drain-source avalanche
energy
E
DS(AL)S
non-repetitive drain-source
avalanche energy
peak drain current
total power dissipation
storage temperature
junction temperature
T
mb
= 25
°
C
-
-
52
156
A
A
T
j
= 25
°
C; R
GS
≥
50
; I
DS(AL)R
= 5 A;
V
DD
= 15 V; duty < 0.1%
unclamped inductive load; I
D
= 50 A;
V
DD
≤
15 V; R
GS
= 50
; V
GS
= 10 V;
starting T
j
= 25
°
C
-
2.5
mJ
-
250
mJ
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PH-32FN 制造商:未知廠家 制造商全稱:未知廠家 功能描述:PIPE HANGER
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