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參數(shù)資料
| 型號： | P0120008P |
| 廠商： | SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC. |
| 英文描述： | 1W GaAs Power FET (Pb-Free Type) |
| 中文描述： | 1W的GaAs功率場效應管（無鉛型） |
| 文件頁數(shù)： | 8/13頁 |
| 文件大?。?/td> | 596K |
| 代理商： | P0120008P |
[Typical Performance]
KP028J Application Circuit
Vds=8V Ids=220mA, Tc=25°C
Frequency characteristics were measured with Pout at 17dBm.
50
IP3
Specifications and information are subject to change without notice. 2003-11
Sumitomo Electric Industries, Ltd. 1,Taya-cho, Sakae-ku, Yokohama, 244-8588 Japan
Phone: +81-45-853-7263 Fax: +81-45-853-1291 e-mail :
GaAsIC-ml@ml.sei.co.jp
Web Site:
www.sei.co.jp/GaAsIC/
-8-
Technical Note
P0120008P
1W GaAs Power FET (Pb-Free Type)
SUMITOMO ELECTRIC
10
15
20
25
30
35
40
45
-4
-2
0
2
4
6
P
G
I
Pin (dBm)
180
185
190
195
200
205
210
215
220
8
Pout, Gain, IP3, Ids vs Pin
Ids
Pout
Gain
I
10
12
14
16
18
20
22
-70
-65
-60
-55
-50
-45
-40
I
I
Pout (dBm)
IM3, IM5 vs Pout
IM3
IM5
42.0
42.5
43.0
43.5
44.0
44.5
2100
2120
2140
2160
2180
I
Frequency (MHz)
IP3 vs Frequency
Vds=8V
Vds=7V
Vds=6V
38
2100
39
40
41
42
43
44
45
2120
2140
2160
2180
I
Frequency (MHz)
IP3 vs Frequency
Ids=220mA
Ids=190mA
Ids=160mA
14.0
14.1
14.2
14.3
14.4
14.5
2100
2120
2140
2160
2180
G
Frequency (MHz)
Gain vs Frequency
Vds=8V
Vds=7V
Vds=6V
14.0
14.1
14.2
14.3
14.4
14.5
2100
2120
2140
2160
2180
G
Frequency (MHz)
Gain vs Frequency
Ids=160mA
Ids=190mA
Ids=220mA
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