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參數(shù)資料
| 型號： | P0120008P |
| 廠商： | SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC. |
| 英文描述： | 1W GaAs Power FET (Pb-Free Type) |
| 中文描述： | 1W的GaAs功率場效應(yīng)管（無鉛型） |
| 文件頁數(shù)： | 6/13頁 |
| 文件大?。?/td> | 596K |
| 代理商： | P0120008P |
NF Characteristics
Specifications and information are subject to change without notice. 2003-11
Sumitomo Electric Industries, Ltd. 1,Taya-cho, Sakae-ku, Yokohama, 244-8588 Japan
Phone: +81-45-853-7263 Fax: +81-45-853-1291 e-mail :
GaAsIC-ml@ml.sei.co.jp
Web Site:
www.sei.co.jp/GaAsIC/
-6-
Technical Note
P0120008P
1W GaAs Power FET (Pb-Free Type)
SUMITOMO ELECTRIC
[Note]
The data for Smith charts were measured at frequency of 2GHz and Tc of 25°C.
(G
(G
2.0
1.28
0.45
-150.9
0.08
Ids=220mA
Ids=180mA
Ids=160mA
0
1
1
5
2
3
-
4
5.0
0
0
0
0
0
0
1.28
1.78
-
1
10.0
-
-
-
20
-
30
4.0
-0.2
0
-04
0
-.
-
0
1
1
5
2
3
-
4
5.0
0
0
0
0
0
0
1.21
1.71
-
1
10.0
-
-
-
20
-
30
4.0
-0.2
0
-04
0
-.
-
2
0
0
1
1
5
2
3
-
4
5.0
0
0
0
0
0
1.39
1.89
-
1
10.0
-
-
-
20
-
30
4.0
-0.2
0
-04
0
-.
-
Vds=8V
Ids=220mA
Associated
Gain(dB)
Vds=8V
Ids=160mA
Associated
Gain(dB)
Mag
0.51
0.40
0.29
0.34
0.34
0.40
0.45
0.48
0.46
Ang(deg)
-84.5
-48.2
-8.0
43.3
85.4
117.8
150.1
178.7
-148.3
Mag
0.51
0.40
0.24
0.28
0.30
0.37
0.40
0.42
0.43
Ang(deg)
-90.0
-53.1
-27.6
31.5
77.1
112.5
145.4
173.8
-150.8
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0.25
0.39
0.59
0.66
0.81
0.85
1.00
1.05
1.39
0.09
0.13
0.17
0.17
0.15
0.11
0.07
0.05
0.10
23.1
20.6
18.9
18.0
16.9
16.1
15.4
14.7
14.1
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0.16
0.27
0.50
0.61
0.74
0.74
0.87
0.95
1.21
0.07
0.10
0.14
0.15
0.13
0.10
0.07
0.05
0.08
22.6
20.3
18.2
17.4
16.5
15.7
15.0
14.3
13.8
Vds=8V
Ids=180mA
Associated
Gain(dB)
Mag
0.50
0.38
0.29
0.30
0.29
0.38
0.42
0.43
Ang(deg)
-90.0
-55.1
-15.1
36.7
78.8
114.6
146.8
175.5
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
0.18
0.35
0.51
0.62
0.75
0.77
0.89
0.98
0.08
0.11
0.16
0.15
0.14
0.10
0.07
0.05
22.6
20.2
18.6
17.6
16.6
15.8
15.1
14.4
13.9
Freq.
(GHz)
NFmin
(dB)
Γ
opt
Rn/50
Freq.
Hz)
NFmin
(dB)
Γ
opt
Rn/50
Freq.
Hz)
NFmin
(dB)
Γ
opt
Rn/50
0
0.5
1.0
Frequency (GHz)
1.5
2.0
2.5
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
N
Ids=220mA
Ids=180mA
Ids=160mA
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