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參數(shù)資料
| 型號： | P0120008P |
| 廠商： | SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC. |
| 英文描述： | 1W GaAs Power FET (Pb-Free Type) |
| 中文描述： | 1W的GaAs功率場效應管（無鉛型） |
| 文件頁數(shù)： | 3/13頁 |
| 文件大?。?/td> | 596K |
| 代理商： | P0120008P |
Tc=25°C, Vds=8V
Ids=180mA,
Common Source, Zo=50
(Calibrated to device leads)
Technical Note
P0120008P
1W GaAs Power FET (Pb-Free Type)
SUMITOMO ELECTRIC
0
1
10.0
5
5.0
2
3
4
0
0
0
0
0
0
S11
S22
1.2GHz
1.2GHz
2.4GHz
2.4GHz
1
-
1
-
-
-
20
-
30
-
4.0
-02
0
-04
-.
0
-
0
9
-180
-
S21
S12
1.2GHz
1.2GHz
2.4GHz
2.4GHz
2.0
4.0
6.0
0
0
0.02
0.04 0.06
Scale for |S12|
45
13
-15
-4
S
Ids
Ids
=220mA
Freq(GHz)
S11 Mag
S11Ang
S21 Mag
S21 Ang
S12 Mag
S12 Ang
S22 Mag
S22 Ang
1.2
0.741
-157.9
5.797
77.8
0.047
35.3
0.151
-131.4
1.4
0.740
-168.8
5.052
69.4
0.050
33.3
0.160
-140.8
1.6
0.740
-178.1
4.480
61.7
0.053
31.2
0.173
-147.8
1.8
0.737
173.7
4.025
54.4
0.056
29.1
0.183
-152.5
2.0
0.734
165.7
3.666
47.3
0.059
26.8
0.190
-157.5
2.2
0.730
158.1
3.367
40.4
0.063
24.2
0.197
-160.7
2.4
0.730
150.5
3.120
33.5
0.067
21.1
0.195
-166.7
=180mA
Freq(GHz)
S11 Mag
S11Ang
S21 Mag
S21 Ang
S12 Mag
S12 Ang
S22 Mag
S22 Ang
1.2
0.741
-157.9
5.791
77.9
0.047
34.6
0.158
-137.1
1.4
0.739
-168.8
5.046
69.5
0.050
32.4
0.168
-146.2
1.6
0.738
-178.1
4.475
61.9
0.053
30.3
0.181
-152.8
1.8
0.736
173.7
4.022
54.6
0.056
28.1
0.190
-157.4
2.0
0.732
165.7
3.663
47.5
0.059
25.8
0.197
-162.2
2.2
0.728
158.1
3.364
40.7
0.063
23.2
0.203
-165.4
2.4
0.728
150.5
3.119
33.8
0.067
20.0
0.201
-171.5
[Note]
You can download the S-parameter list from our web site:
www.sei.co.jp/GaAsIC
/
Specifications and information are subject to change without notice. 2003-11
Sumitomo Electric Industries, Ltd. 1,Taya-cho, Sakae-ku, Yokohama, 244-8588 Japan
Phone: +81-45-853-7263 Fax: +81-45-853-1291 e-mail :
GaAsIC-ml@ml.sei.co.jp
-3-
Web Site:
www.sei.co.jp/GaAsIC/
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