參數(shù)資料
型號: P0120008P
廠商: SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
英文描述: 1W GaAs Power FET (Pb-Free Type)
中文描述: 1W的GaAs功率場效應(yīng)管(無鉛型)
文件頁數(shù): 7/13頁
文件大?。?/td> 596K
代理商: P0120008P
Application Circuit : 2110-2170MHz
C2
Specifications and information are subject to change without notice. 2003-11
Sumitomo Electric Industries, Ltd. 1,Taya-cho, Sakae-ku, Yokohama, 244-8588 Japan
Phone: +81-45-853-7263 Fax: +81-45-853-1291 e-mail :
GaAsIC-ml@ml.sei.co.jp
Web Site:
www.sei.co.jp/GaAsIC/
-7-
Technical Note
P0120008P
1W GaAs Power FET (Pb-Free Type)
SUMITOMO ELECTRIC
C7
R1
C2
C5
L1
C6
C3
C4
L2
C1
C8
RF in (Rs=50
)
Vg
Vd
D.U.T
RF out (RL=50
)
Z1
Z2
Z3
Z4
Z5
Z6
Z7
C9
C10
KP028J
RF out
Vg
(-0.7~-2V)
(+8V)
L2
L1
R1
C4
C6
C7
C8
C9
C1
C3
C10
RF in
Vd
C5
Ref. Des.
Value
Part Number
SUSUMU
RR0816 series
R1
82
C1
C2
C3
C4
C5
C6
C7
C8
C9
C10
L1
L2
2pF
0.5pF
0.5pF
1pF
2pF
1μF
1μF
4pF
0.5pF
0.5pF
22nH
22nH
MURATA
GRM18 series
TOKO LL1608
series
Ref.
Designator
Z1
Z2
Z3
Z4
Z5
Z6
Z7
All microstrip lines have a line impedance of 50
.
Electrical length
@ 2.1GHz (deg)
3.86
27.9
4.08
13.61
8.62
6.38
45.37
1.9
2.0
2.1
2.2
2.3
Frequency (GHz)
-30
-20
-10
0
10
20
S12
S11
S22
S21
S
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