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參數(shù)資料
| 型號(hào)： | P0120008P |
| 廠商： | SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC. |
| 英文描述： | 1W GaAs Power FET (Pb-Free Type) |
| 中文描述： | 1W的GaAs功率場(chǎng)效應(yīng)管（無鉛型） |
| 文件頁數(shù)： | 4/13頁 |
| 文件大小： | 596K |
| 代理商： | P0120008P |
Technical Note
P0120008P
1W GaAs Power FET (Pb-Free Type)
SUMITOMO ELECTRIC
Ids=220mA
Ids=180mA
-100
-80
-60
-40
-20
0
20
40
60
80
-15
-10
-5
0
5
10
15
20
Pin (dBm)
Pout
Gain
IP3
η
add
IM3
IM3/Pout
P
G
I
I
I
η
a
-100
-80
-60
-40
-20
0
20
40
60
80
-15
-10
-5
0
5
10
15
20
Pin (dBm)
Pout
Gain
IP3
η
add
IM3
IM3/Pout
P
G
I
I
I
η
a
Device: P0120008P
Frequency: f1=2.1GHz f2=2.101GHz
Bias: Vds=8V, Ids=220mA
Source Matching:Mag 0.75 Ang -169.5
°
Load Matching:Mag 0.36 Ang 175.9°
Device: P0120008P
Frequency: f1=2.1GHz f2=2.101GHz
Bias: Vds=8V, Ids=180mA
Source Matching:Mag 0.75 Ang -169.5°
Load Matching:Mag 0.32 Ang 144.6°
[Note]
P
out
and
η
add
are measured by one signal.
The data for the figures above were measured with the load impedance matched to IP3.
Id=220mA
Pin
(dBm)
-10.0
-5.0
0.0
5.0
10.0
15.0
Pout
(dBm)
4.4
9.5
14.5
19.5
24.5
29.3
Gain
(dB)
14.4
14.5
14.5
14.5
14.5
14.3
IM3
(dBm)
-68.1
-57.4
-41.8
-25.5
-2.4
13.8
IM3/Pout
(dBc)
-72.5
-66.8
-56.3
-45.0
-26.8
-15.5
IP3
(dBm)
40.6
42.9
42.7
41.8
37.4
34.6
Id
(mA)
178.4
173.4
165.8
162.8
170.3
202.3
η
add
(%)
0.2
0.6
2.0
6.6
19.8
50.6
Id=180mA
Pin
(dBm)
-10.0
-5.0
0.0
5.0
10.0
15.0
Pout
(dBm)
4.4
9.5
14.6
19.6
24.6
29.3
Gain
(dB)
14.4
14.5
14.6
14.6
14.6
14.3
IM3
(dBm)
-66.3
-56.0
-41.4
-23.7
0.8
13.6
IM3/Pout
(dBc)
-70.7
-65.5
-56.0
-43.3
-23.8
-15.7
IP3
(dBm)
39.9
42.3
42.6
41.3
36.0
34.6
Id
(mA)
164.9
159.6
151.8
147.5
156.1
189.3
η
add
(%)
0.2
0.7
2.3
7.5
22.2
53.6
Specifications and information are subject to change without notice. 2003-11
Sumitomo Electric Industries, Ltd. 1,Taya-cho, Sakae-ku, Yokohama, 244-8588 Japan
Phone: +81-45-853-7263 Fax: +81-45-853-1291 e-mail :
GaAsIC-ml@ml.sei.co.jp
-4-
Web Site:
www.sei.co.jp/GaAsIC/
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