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參數(shù)資料
| 型號(hào)： | P0120007P |
| 廠商： | SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC. |
| 英文描述： | 250mW GaAs Power FET (Pb-Free Type) |
| 中文描述： | 25萬千瓦GaAs功率場效應(yīng)管（無鉛型） |
| 文件頁數(shù)： | 8/13頁 |
| 文件大?。?/td> | 560K |
| 代理商： | P0120007P |
[Typical Performance]
KP027J Application Circuit
Vds=8V Ids=100mA, Tc=25°C
Frequency characteristics were measured with Pout at 13dBm.
Pout, Gain, IP3, Ids vs Pin
Specifications and information are subject to change without notice. 2003-11
Sumitomo Electric Industries, Ltd. 1,Taya-cho, Sakae-ku, Yokohama, 244-8588 Japan
Phone: +81-45-853-7263 Fax: +81-45-853-1291 e-mail :
GaAsIC-ml@ml.sei.co.jp
Web Site:
www.sei.co.jp/GaAsIC/
-8-
Technical Note
P0120007P
250mW GaAs Power FET (Pb-Free Type)
SUMITOMO ELECTRIC
5
10
15
20
25
30
35
40
45
70
75
80
85
90
95
100
105
110
P
G
I
I
-10
-8
-6
-4
-2
0
2
4
Pin (dBm)
IP3
Ids
Gain
Pout
-70
-65
-60
-55
-50
-45
-40
-35
-30
6
8
10
12
14
16
18
20
I
I
Pout (dBm)
IM3, IM5 vs Pout
IM3
IM5
37.2
37.4
37.6
37.8
38.0
38.2
38.4
38.6
2100
2120
2140
2160
2180
I
Frequency (MHz)
IP3 vs Frequency
Vds=8V
Vds=7V
Vds=6V
31
2100
32
33
34
35
36
37
38
39
2120
2140
2160
2180
I
Frequency (MHz)
IP3 vs Frequency
Ids=100mA
Ids=80mA
Ids=60mA
15.1
15.2
15.3
15.4
15.5
15.6
15.7
2100
2120
2140
2160
2180
G
Frequency (MHz)
Gain vs Frequency
Vds=6V
Vds=8V
Vds=7V
15.1
15.2
15.3
15.4
15.5
15.6
15.7
15.8
2100
2120
2140
2160
2180
G
Frequency (MHz)
Gain vs Frequency
Ids=60mA
Ids=80mA
Ids=100mA
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相關(guān)代理商/技術(shù)參數(shù) |
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