參數(shù)資料
型號： P0120007P
廠商： SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
英文描述： 250mW GaAs Power FET (Pb-Free Type)
中文描述： 25萬千瓦GaAs功率場效應(yīng)管（無鉛型）
文件頁數(shù)： 4/13頁
文件大小： 560K
代理商： P0120007P
Technical Note
P0120007P
250mW GaAs Power FET (Pb-Free Type)
SUMITOMO ELECTRIC
Ids=100mA
Ids=80mA
-100
-80
-60
-40
-20
0
20
40
60
80
-20
-15
-10
-5
0
5
10
15
Pin (dBm)
Pout
Gain
IP3
η
add
IM3
IM3/Pout
P
G
I
I
I
a
a
-100
-80
-60
-40
-20
0
20
40
60
80
-20
-15
-10
-5
0
5
10
15
Pin (dBm)
Pout
Gain
IP3
η
add
IM3
IM3/Pout
P
G
I
I
I
a
a
Device: P0120007P
Frequency: f1=2.1GHz f2=2.101GHz
Bias: Vds=8V, Ids=100mA
Source Matching:Mag 0.68 Ang 133.9
°
Load Matching:Mag 0.37 Ang 91.1°
Device: P0120007P
Frequency: f1=2.1GHz f2=2.101GHz
Bias: Vds=8V, Ids=80mA
Source Matching:Mag 0.68 Ang 133.9°
Load Matching:Mag 0.54 Ang 77.8°
[Note]
P
out
and
η
add
are measured by one signal.
The data for the figures above were measured with the load impedance matched to IP3.
Id=100mA
Pin
(dBm)
-15.0
-10.0
-5.0
0.0
5.0
10.0
Pout
(dBm)
1.2
6.3
11.4
16.4
21.4
25.1
Gain
(dB)
16.2
16.3
16.4
16.4
16.4
15.1
IM3
(dBm)
-68.1
-59.2
-47.5
-32.8
0.1
13.8
IM3/Pout
(dBc)
-69.3
-65.5
-58.8
-49.2
-21.3
-11.3
IP3
(dBm)
35.9
39.0
40.8
41.0
30.7
27.1
Id
(mA)
97.8
95.3
91.7
88.2
85.1
93.3
η
add
(%)
0.2
0.5
1.8
6.0
19.8
41.9
Id=80mA
Pin
(dBm)
-15.0
-10.0
-5.0
0.0
5.0
10.0
Pout
(dBm)
0.7
5.9
11.0
16.1
21.0
24.4
Gain
(dB)
15.7
15.9
16.0
16.1
16.0
14.4
IM3
(dBm)
-67.8
-60.3
-48.9
-27.3
1.5
12.4
IM3/Pout
(dBc)
-68.5
-66.2
-59.8
-43.3
-19.5
-12.0
IP3
(dBm)
34.9
39.0
40.9
37.7
29.1
27.2
Id
(mA)
78.9
76.1
72.6
69.9
65.0
69.6
η
add
(%)
0.2
0.6
2.1
7.0
23.6
47.8
Specifications and information are subject to change without notice. 2003-11
Sumitomo Electric Industries, Ltd. 1,Taya-cho, Sakae-ku, Yokohama, 244-8588 Japan
Phone: +81-45-853-7263 Fax: +81-45-853-1291 e-mail :
GaAsIC-ml@ml.sei.co.jp
-4-
Web Site:
www.sei.co.jp/GaAsIC/
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