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參數(shù)資料
| 型號： | NTHD2102P |
| 廠商： | ON SEMICONDUCTOR |
| 英文描述： | Power MOSFET −8.0 V, −4.6 A Dual P−Channel ChipFET |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 54K |
| 代理商： | NTHD2102P |
NTHD2102P
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(T
J
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage (Note 2)
Temperature Coefficient (Positive)
V
(Br)DSS
V
GS
= 0 V, I
D
= 250 A
8.0
V
GateBody Leakage Current Zero
I
GSS
V
DS
= 0 V, V
GS
=
8.0 V
100
nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 6.4 V, V
GS
= 0 V
V
DS
= 6.4 V, V
GS
= 0 V,
T
J
= 85
°
C
1.0
5.0
A
ON CHARACTERISTICS
(Note 2)
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250 A
0.45
1.5
V
Static DraintoSource OnResistance
R
DS(on)
V
GS
= 4.5 V, I
D
= 3.4 A
V
GS
= 2.5 V, I
D
= 2.7 A
V
GS
= 1.8 V, I
D
= 1.0 A
50
68
100
58
85
160
m
Forward Transconductance
g
FS
V
DS
= 5.0 V, I
D
= 3.4 A
8.0
S
Diode Forward Voltage
V
SD
I
S
= 1.1 A, V
GS
= 0 V
0.8
1.2
V
DYNAMIC CHARACTERISTICS
Input Capacitance
C
iss
V
DS
= 6.4 V
715
pF
Output Capacitance
C
oss
V
GS
= 0 V
160
Transfer Capacitance
C
rss
f = 1.0 MHz
120
SWITCHING CHARACTERISTICS
(Note 3
TurnOn Delay Time
t
d(on)
V
DD
= 6.4 V
8.0
ns
Rise Time
t
r
V
GS
= 4.5 V
20
TurnOff Delay Time
t
d(off)
I
D
= 3.2 A
20
Fall Time
t
f
R
G
= 2.0
15
Gate Charge
Q
g
V
GS
= 2.5 V
8.0
16
nC
Q
gs
I
D
= 3.2 A
2.2
Q
gd
V
DS
= 6.4 V
4.0
SourceDrain Reverse Recovery Time
t
rr
I
F
= 0.9 A, di/dt = 100
15
30
nA
2. Pulse Test: Pulse Width = 250 s, Duty Cycle = 2%.
3. Switching characteristics are independent of operating junction temperatures.
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