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參數(shù)資料
| 型號： | NTHD2102P |
| 廠商： | ON SEMICONDUCTOR |
| 英文描述： | Power MOSFET −8.0 V, −4.6 A Dual P−Channel ChipFET |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 54K |
| 代理商： | NTHD2102P |
Semiconductor Components Industries, LLC, 2004
December, 2004 Rev. 4
1
Publication Order Number:
NTHD2102P/D
NTHD2102P
Power MOSFET
8.0 V, 4.6 A Dual PChannel ChipFET
Features
Offers an Ultra Low R
DS(on)
Solution in the ChipFET Package
Miniature ChipFET Package 40% Smaller Footprint than TSOP6
making it an Ideal Device for Applications where Board Space is at a
Premium
Low Profile (<1.1 mm) Allows it to Fit Easily into Extremely Thin
Environments such as Portable Electronics
Designed to Provide Low R
DS(on)
at Gate Voltage as Low as 1.8 V, the
Operating Voltage used in many Logic ICs in Portable Electronics
Simplifies Circuit Design since Additional Boost Circuits for Gate
Voltages are not Required
Operated at Standard Logic Level Gate Drive, Facilitating Future
Migration to Lower Levels using the same Basic Topology
PbFree Package is Available
Applications
Optimized for Battery and Load Management Applications in
Portable Equipment such as MP3 Players, Cell Phones, Digital
Cameras, Personal Digital Assistant and other Portable Applications
Charge Control in Battery Chargers
Buck and Boost Converters
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
DraintoSource Voltage
V
DSS
V
GS
I
D
I
D
8.0
V
GatetoSource Voltage Continuous
8.0
V
Drain Current Continuous
5 seconds
3.4
4.6
A
Total Power Dissipation
Continuous @ T
A
= 25
°
C
(5 sec) @ T
A
= 25
°
C
Continuous @ 85
°
C
(5 sec) @ 85
°
C
P
D
1.1
2.1
0.6
1.1
W
Operating Junction and Storage Temperature
Range
T
J
, T
stg
55 to
+150
°
C
Continuous Source Current
(Diode Conduction)
Is
1.1
A
Thermal Resistance (Note 1)
JunctiontoAmbient, 5 sec
JunctiontoAmbient, Continuous
R
JA
R
JA
60
113
°
C/W
Maximum Lead Temperature for Soldering
Purposes, 1/8
″
from case for 10 seconds
T
L
260
°
C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.27 in sq
[1 oz] including traces).
PChannel MOSFET
Device
Package
Shipping
ORDERING INFORMATION
NTHD2102PT1
ChipFET
3000/Tape & Reel
http://onsemi.com
S
1
G
1
D
1
PChannel MOSFET
S
2
G
2
D
2
8.0 V
50 m @ 4.5 V
I
D
MAX
V
(BR)DSS
R
DS(on)
TYP
4.6 A
68 m @ 2.5 V
100 m @ 1.8 V
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
ChipFET
CASE 1206A
STYLE 2
MARKING
DIAGRAM
1
2
3
4
S
1
G
1
S
2
G
2
D
1
D
1
D
2
D
2
PIN
CONNECTIONS
8
7
6
5
5
6
7
8
1
2
3
4
D
M
D5 = Specific Device Code
M = Month Code
NTHD2102PT1G
ChipFET
(PbFree)
3000/Tape & Reel
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| NTHD2102PT1 | 功能描述:MOSFET -8V -4.6A P-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTHD2102PT1G | 功能描述:MOSFET -8V -4.6A P-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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