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參數(shù)資料
| 型號(hào)： | NTHD4502NT1 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | Power MOSFET 30 V, 3.9 A, Dual N−Channel ChipFET |
| 中文描述： | 2200 mA, 30 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | CASE 1206A-03, CHIPFET-8 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 60K |
| 代理商： | NTHD4502NT1 |
Semiconductor Components Industries, LLC, 2004
October, 2004 Rev. 4
1
Publication Order Number:
NTHD4502N/D
NTHD4502N
Power MOSFET
30 V, 3.9 A, Dual NChannel ChipFET
Features
Planar Technology Device Offers Low R
DS(on)
and Fast Switching Speed
Leadless ChipFET Package has 40% Smaller Footprint than TSOP6.
Ideal Device for Applications Where Board Space is at a Premium.
ChipFET Package Exhibits Excellent Thermal Capabilities. Ideal for
Applications Where Heat Transfer is Required.
PbFree Package is Available
Applications
DCDC Buck or Boost Converters
Low Side Switching
Optimized for Battery and Low Side Switching Applications in
Computing and Portable Equipment
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise noted)
Parameter
Symbol
Value
Unit
DraintoSource Voltage
V
DSS
V
GS
I
D
30
V
GatetoSource Voltage
±
20
V
Continuous Drain
Current (Note 1)
Steady
State
T
A
= 25
°
C
T
A
= 85
°
C
T
A
= 25
°
C
2.9
A
2.1
t
≤
5 s
3.9
Power Dissipation
(Note 1)
Steady
State
T
A
= 25 C
P
D
1.13
W
t
≤
5 s
2.1
Continuous Drain
Current (Note 2)
T
A
= 25
°
C
T
A
= 85
°
C
T
A
= 25
°
C
I
D
2.2
A
Steady
State
1.6
Power Dissipation
(Note 2)
y
P
D
0.64
W
Pulsed Drain Current
t
p
= 10 s
C = 100 pF,
R
S
= 1500
I
DM
ESD
HBM
12
A
ESD Capability
(Note 3)
125
V
Operating Junction and Storage Temperature
T
J
,
T
STG
55 to
150
°
C
Source Current (Body Diode)
I
S
T
L
2.5
A
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
260
°
C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq
[1 oz] including traces).
2. Surface Mounted on FR4 Board using the minimum recommended pad size
(Cu area = 0.214 in sq).
3. ESD Rating Information: HBM Class 0.
Device
Package
Shipping
ORDERING INFORMATION
NTHD4502NT1
ChipFET
ChipFET
(PbFree)
3000/Tape & Reel
ChipFET
CASE 1206A
STYLE 2
http://onsemi.com
30 V
110 m @ 4.5 V
80 m @ 10 V
R
DS(on)
TYP
3.9 A
I
D
MAX
V
(BR)DSS
NChannel MOSFET
MARKING
DIAGRAM
C
M
1
2
3
4
S
1
G
1
S
2
G
2
D
1
D
1
D
2
D
2
PIN
CONNECTIONS
NTHD4502NT1G
3000/Tape & Reel
8
7
6
5
5
6
7
8
1
2
3
4
D
1
, D
2
G
1
, G
2
S
1
, S
2
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
C5 = Specific Device Code
M = Month Code
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| NTHD4502NT1G | Power MOSFET 30 V, 3.9 A, Dual N−Channel ChipFET |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NTHD4502NT1G | 功能描述:MOSFET 30V 3.9A Dual N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTHD4508N | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET 20 V, 4.1 A, Dual N−Channel ChipFET |
| NTHD4508NT1 | 功能描述:MOSFET 20V 4.1A Dual RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTHD4508NT1G | 功能描述:MOSFET 20V 4.1A Dual N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTHD4N02 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Typical Uses for FETKY Devices |
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