- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄189003 > NAND04GR4B2CN1F (NUMONYX) 256M X 16 FLASH 1.8V PROM, 35 ns, PDSO48 PDF資料下載
參數(shù)資料
| 型號： | NAND04GR4B2CN1F |
| 廠商： | NUMONYX |
| 元件分類： | PROM |
| 英文描述： | 256M X 16 FLASH 1.8V PROM, 35 ns, PDSO48 |
| 封裝： | 12 X 20 MM, ROHS COMPLIANT, PLASTIC, TSOP-48 |
| 文件頁數(shù)： | 17/57頁 |
| 文件大?。?/td> | 887K |
| 代理商： | NAND04GR4B2CN1F |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁當前第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁第53頁第54頁第55頁第56頁第57頁
NAND01G-B, NAND02G-B, NAND04G-B, NAND08G-B
24/57
Copy Back Program
The Copy Back Program operation is used to copy
the data stored in one page and reprogram it in an-
other page.
The Copy Back Program operation does not re-
quire external memory and so the operation is
faster and more efficient because the reading and
loading cycles are not required. The operation is
particularly useful when a portion of a block is up-
dated and the rest of the block needs to be copied
to the newly assigned block.
If the Copy Back Program operation fails an error
is signalled in the Status Register. However as the
standard external ECC cannot be used with the
Copy Back Program operation bit error due to
charge loss cannot be detected. For this reason it
is recommended to limit the number of Copy Back
Program operations on the same data and or to
improve the performance of the ECC.
The Copy Back Program operation requires four
steps:
1.
The first step reads the source page. The
operation copies all 1056 Words/ 2112 Bytes
from the page into the Data Buffer. It requires:
–
one bus write cycle to setup the command
–
4 bus write cycles to input the source page
address
–
one bus write cycle to issue the confirm
command code
2.
When the device returns to the ready state
(Ready/Busy High), the next bus write cycle of
the command is given with the 4 bus cycles to
input the target page address. Refer to Table
11. for the addresses that must be the same
for the Source and Target pages.
3.
Then the confirm command is issued to start
the P/E/R Controller.
To see the Data Input cycle for modifying the
source page and an example of the Copy Back
Program operation refer to Figure 13. .
A data input cycle to modify a portion or a multiple
distant portion of the source page, is shown in Fig-
Table 11. Copy Back Program x8 Addresses
Note: 1. DD = Dual Die
Table 12. Copy Back Program x16 Addresses
Note: 1. DD = Dual Die
Density
Same Address for Source and
Target Pages
1 Gbit
no constraint
2 Gbit
no constraint
2 Gbit DD(1)
A28
4 Gbit
no constraint
Density
Same Address for Source and
Target Pages
1 Gbit
no constraint
2 Gbit
A28
2 Gbit DD(1)
A27
4 Gbit
no constrain
相關PDF資料 |
PDF描述 |
|---|---|
| NAND08GW3B2CZL1F | 1G X 8 FLASH 3V PROM, 25000 ns, PBGA52 |
| NAND128W3A2BV6E | 16M X 8 FLASH 3V PROM, 12000 ns, PDSO48 |
| NAND512R3A2CV6E | 64M X 8 FLASH 1.8V PROM, 15000 ns, PDSO48 |
| NAND128W4A2CZA6E | 8M X 16 FLASH 3V PROM, 35 ns, PBGA55 |
| NAND128R4A2BZA6E | 8M X 16 FLASH 1.8V PROM, 35 ns, PBGA55 |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| NAND04GR4B2DWFD | 制造商:Micron Technology Inc 功能描述:NAND - Gel-pak, waffle pack, wafer, diced wafer on film |
| NAND04GR4B2EN6E | 制造商:Micron Technology Inc 功能描述:NAND - Trays |
| NAND04GR4B2EN6F | 制造商:Micron Technology Inc 功能描述:NAND - Tape and Reel |
| NAND04GW3B2AN6E | 制造商:Micron Technology Inc 功能描述:FLASH PARALLEL 3V/3.3V 4GBIT 512MX8 25US 48TSOP - Trays |
| NAND04GW3B2BE06 | 功能描述:閃存 NAND & S.MEDIA FLASH RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
發(fā)布緊急采購，3分鐘左右您將得到回復。