參數(shù)資料
型號: NAND01GR4B2BZA1F
廠商: STMICROELECTRONICS
元件分類: PROM
英文描述: 64M X 16 FLASH 1.8V PROM, 25000 ns, PBGA63
封裝: 9 X 11 MM, 1 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, VFBGA-63
文件頁數(shù): 35/63頁
文件大?。?/td> 684K
代理商: NAND01GR4B2BZA1F
Software algorithms
NAND01G-B2B, NAND02G-B2C
40/63
Figure 17.
Error Detection
8.6
Hardware Simulation models
8.6.1
Behavioral simulation models
Denali Software Corporation models are platform independent functional models designed
to assist customers in performing entire system simulations (typical VHDL/Verilog). These
models describe the logic behavior and timings of NAND Flash devices, and so allow
software to be developed before hardware.
8.6.2
IBIS simulations models
IBIS (I/O Buffer Information Specification) models describe the behavior of the I/O buffers
and electrical characteristics of Flash devices.
These models provide information such as AC characteristics, rise/fall times and package
mechanical data, all of which are measured or simulated at voltage and temperature ranges
wider than those allowed by target specifications.
IBIS models are used to simulate PCB connections and can be used to resolve compatibility
issues when upgrading devices. They can be imported into SPICETOOLS.
New ECC generated
during read
XOR previous ECC
with new ECC
All results
= zero?
22 bit data = 0
YES
11 bit data = 1
NO
1 bit data = 1
Correctable
Error
ECC Error
No Error
ai08332
>1 bit
= zero?
YES
NO
相關(guān)PDF資料
PDF描述
NAND08GR4B3AZB6 512M X 16 FLASH 1.8V PROM, 25000 ns, PBGA63
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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NAND01GR4B2BZA6F 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory
NAND01GR4B2BZB1 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
NAND01GR4B2BZB6 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory