參數(shù)資料
型號: NAND01GR4B2BZA1F
廠商: STMICROELECTRONICS
元件分類: PROM
英文描述: 64M X 16 FLASH 1.8V PROM, 25000 ns, PBGA63
封裝: 9 X 11 MM, 1 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, VFBGA-63
文件頁數(shù): 28/63頁
文件大?。?/td> 684K
代理商: NAND01GR4B2BZA1F
Device operations
NAND01G-B2B, NAND02G-B2C
34/63
6.9
Read Electronic Signature
The device contains a Manufacturer Code and Device Code. To read these codes three steps
are required:
1.
one Bus Write cycle to issue the Read Electronic Signature command (90h)
2.
one Bus Write cycle to input the address (00h)
3.
four Bus Read Cycles to sequentially output the data (as shown in Table 14: Electronic
Table 14.
Electronic Signature
Part Number
Byte/Word 1
Byte/Word 2
Byte/Word 3
(see Table 15)
Byte/Word 4
(see Table 16)
Manufacturer
Code
Device code
NAND01GR3B2B
20h
A1h
80h
15h
NAND01GW3B2B
F1h
1Dh
NAND01GR4B2B
0020h
B1h
55h
NAND01GW4B2B
C1h
5Dh
NAND02GR3B2C
20h
AAh
15h
NAND02GW3B2C
DAh
1Dh
NAND02GR4B2C
0020h
BAh
55h
NAND02GW42C
CAh
5Dh
Table 15.
Electronic Signature Byte 3
I/O
Definition
Value
Description
I/O1-I/O0
Internal Chip number
0 0
0 1
1 0
1 1
1
2
4
8
I/O3-I/O2
Cell Type
0 0
0 1
1 0
1 1
2-level cell
4-level cell
8-level cell
16-level cell
I/O5-I/O4
Number of simultaneously
programmed pages
0 0
0 1
1 0
1 1
1
2
4
8
I/O6
Interleaved Programming
between multiple devices
0
1
Not supported
Supported
I/O7
Cache Program
0
1
Not supported
Supported
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參數(shù)描述
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