- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄359236 > MTD20N03HDL (MOTOROLA INC) TMOS POWER FET LOGIC LEVEL 20 AMPERES 30 VOLTS RDS(on) = 0.035 OHM PDF資料下載
參數(shù)資料
| 型號(hào)： | MTD20N03HDL |
| 廠商： | MOTOROLA INC |
| 元件分類： | JFETs |
| 英文描述： | TMOS POWER FET LOGIC LEVEL 20 AMPERES 30 VOLTS RDS(on) = 0.035 OHM |
| 中文描述： | 20 A, 30 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | DPAK-3 |
| 文件頁(yè)數(shù)： | 5/38頁(yè) |
| 文件大?。?/td> | 739K |
| 代理商： | MTD20N03HDL |
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)當(dāng)前第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)第16頁(yè)第17頁(yè)第18頁(yè)第19頁(yè)第20頁(yè)第21頁(yè)第22頁(yè)第23頁(yè)第24頁(yè)第25頁(yè)第26頁(yè)第27頁(yè)第28頁(yè)第29頁(yè)第30頁(yè)第31頁(yè)第32頁(yè)第33頁(yè)第34頁(yè)第35頁(yè)第36頁(yè)第37頁(yè)第38頁(yè)
Analog Integrated Circuit Device Data
Freescale Semiconductor
5
34701
MAXIMUM RATINGS
MAXIMUM RATINGS
Table 2.
All voltages are with respect to ground unless otherwise noted. Exceeding these ratings may cause a malfunction or permanent
damage to the device.
Maximum Ratings
Rating
Symbol
Value
Unit
Electrical Ratings
Supply Voltage
V
IN1
, V
IN2
-0.3 to 7.0
V
Switching Node Voltage
V
SW
-1.0 to 7.0
V
Buck Regulator Bootstrap Input Voltage (BOOT - SW)
V
IN(BOOT)
-0.3 to 8.5
V
Boost Regulator Output Voltage
V
BST
-0.3 to 8.5
V
Boost Regulator Drain Voltage
V
BD
-0.3 to 9.5
V
RST
Drain Voltage
V
RST
-0.3 to 7.0
V
Enable Terminal Voltage at EN1, EN2
V
EN
-0.3 to 7.0
V
Logic Terminal Voltage at SDA, SCL
V
LOG
-0.3 to 7.0
V
Analog Terminal Voltage
LDO, VOUT,
RST
LDRV, LCMP, CS
V
OUT
V
LIN
-0.3 to 7.0
-0.3 to 8.5
V
Terminal Voltage at CLKSEL, ADDR, RT, FREQ, VDDI, CLKSYN, INV,
LFB
V
LOGIC
-0.3 to 3.6
V
ESD Voltage
(1)
Human Body Model
Machine Model
V
ESD
±2000
±200
V
Thermal Ratings
Storage Temperature
T
STG
-65 to 150
°
C
Lead Soldering Temperature
(2)
T
SOLDER
260
°
C
Maximum Junction Temperature
T
JMAX
125
°
C
Thermal Resistance
Junction to Ambient (Single Layer)
(3)
,
(4)
Junction to Ambient (Four Layers)
(3)
,
(4)
R
θ
JA
70
55
°
C/W
Thermal Resistance, Junction to Base
(5)
R
θ
JB
18
°
C/W
Operational Package Temperature (Ambient Temperature)
T
A
-40 to 85
°C
Notes
1.
ESD1 testing is performed in accordance with the Human Body Model (C
ZAP
=100 pF, R
ZAP
=1500
), ESD2 testing is performed in
accordance with the Machine Model (C
ZAP
=200 pF, R
ZAP
=0
), and the Charge Device Model.
Lead soldering temperature limit is for 10 seconds maximum duration.
Junction temperature is a function of on-chip power dissipation, package thermal resistance, mounting site (board) temperature,
ambient temperature, air flow, power dissipation of other components on the board and board thermal resistance.
Per JEDEC JESD51-6 with the board horizontal
Thermal resistance between the die and the printed circuit board per JEDEC JESD51-8. Board temperature is measured on the top
surface of the board near the package.
2.
3.
4.
5.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MTD20N03HL | HDTMOS E-FET High Density Power FET DPAK for Surface Mount |
| MTH-50 | Two-Way Power Dividers 1 - 100 MHz and 40 - 400 MHz |
| MTH-50PIN | Two-Way Power Dividers 1 - 100 MHz and 40 - 400 MHz |
| MTP3N60 | N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
| MTVX2602 | Managed 24 Port 10/100 Mbps Ethernet Switch |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MTD20N03HDLT4 | 制造商:ON Semiconductor 功能描述:Trans MOSFET N-CH 30V 20A 3-Pin(2+Tab) DPAK T/R |
| MTD20N03HL | 制造商:Motorola Inc 功能描述:20N03HL |
| MTD20N06 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:TMOS POWER FET 20 AMPERES 60 VOLTS RDS(on) = 0.080 OHM |
| MTD20N06HD | 制造商:ON Semiconductor 功能描述:Trans MOSFET N-CH 60V 20A 3-Pin(2+Tab) DPAK Rail 制造商:ON Semiconductor 功能描述:MOSFET N D-PAK |
| MTD20N06HD-1 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET 20 Amps, 60 Volts N−Channel DPAK |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。