參數(shù)資料
型號: MTD20N03HDL
廠商: MOTOROLA INC
元件分類: JFETs
英文描述: TMOS POWER FET LOGIC LEVEL 20 AMPERES 30 VOLTS RDS(on) = 0.035 OHM
中文描述: 20 A, 30 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: DPAK-3
文件頁數(shù): 10/38頁
文件大?。?/td> 739K
代理商: MTD20N03HDL
Analog Integrated Circuit Device Data
Freescale Semiconductor
10
34701
STATIC ELECTRICAL CHARACTERISTICS
Control and Supervisory Circuits
Enable (EN1, EN2) Input Voltage Threshold
V
EN-TH
1.0
1.5
2.0
V
Enable (EN1, EN2) Pulldown Resistance
R
EN-PD
30
55
90
k
RST
Low-Level Output Voltage, IOL = 5.0 mA
V
OL
0.4
V
RST
Leakage Current, OFF State, Pulled Up to 5.25 V
I
LKG-RST
10
μ
A
RST
Undervoltage Threshold on VOUT (
VOUT/VOUT
)
(16)
V
OUTITh
-14
-0.5
%
RST
Overvoltage Threshold on VOUT
(
VOUT/VOUT
)
(16)
V
OUTITh
0.5
14
%
RST
Undervoltage Threshold on VLDO
(
VLDO/VLDO
)
(16)
V
LDOITh
-12
-4.0
%
RST
Overvoltage Threshold on VLDO
(
VLDO/VLDO
)
(16)
V
LDOITh
4.0
12
%
RST
Timer Voltage Threshold
V
TH-RT
1.0
1.2
1.5
V
RST
Timer Source Current (RT terminal at 0 V)
I
S-RT
-17
-34
mA
RST
Timer Leakage Current
I
LKG-RT
-1.0
1.0
μ
A
RST
Timer Saturation Voltage, Reset Timer Current = 300
μ
A
V
SAT-RT
35
100
mV
Maximum Recommended Value of the Reset Timer Capacitor
C
t
47
μ
F
CLKSEL Threshold Voltage
V
THCLKS
1.2
1.6
2.0
V
CLKSEL Pullup Resistance
R
PU-CLK
S
60
120
240
k
ADDR Threshold Voltage
(16)
V
THADDR
1.2
1.6
2.0
V
ADDR Pullup Resistance
R
PU-ADDR
60
120
240
k
Thermal Shutdown (IC sensor)
(16)
T
LIM
150
170
190
°C
Thermal Shutdown Hysteresis
(16)
T
LIMHYS
10
°C
SDA, SCL Terminals I
2
C Bus (Standard)
Input Threshold Voltage (Terminal SCL), Rising Edge
(16)
V
LTH
1.3
1.7
V
Input Threshold Voltage (Terminal SDA)
V
LTH
1.3
1.7
V
SDA, SCL Input Current, Input Voltage = 5.25 V (VIN1)
I
IN
1.0
10
μ
A
SDA Low-Level Output Voltage, 3.0 mA Sink Current
V
OL
0.4
V
SDA, SCL Capacitance
(16)
C
Input
7.0
10
pF
Notes
16.
Design information only. This parameter is not production tested.
Table 3. Static Electrical Characteristics (continued)
Characteristics noted under conditions -40°C
T
A
85
°
C unless otherwise noted. Input voltages VIN1 = VIN2
= 3.3 V using
the typical application circuit (see
Figure 33
) unless otherwise noted.
Characteristic
Symbol
Min
Typ
Max
Unit
相關(guān)PDF資料
PDF描述
MTD20N03HL HDTMOS E-FET High Density Power FET DPAK for Surface Mount
MTH-50 Two-Way Power Dividers 1 - 100 MHz and 40 - 400 MHz
MTH-50PIN Two-Way Power Dividers 1 - 100 MHz and 40 - 400 MHz
MTP3N60 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
MTVX2602 Managed 24 Port 10/100 Mbps Ethernet Switch
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MTD20N03HDLT4 制造商:ON Semiconductor 功能描述:Trans MOSFET N-CH 30V 20A 3-Pin(2+Tab) DPAK T/R
MTD20N03HL 制造商:Motorola Inc 功能描述:20N03HL
MTD20N06 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:TMOS POWER FET 20 AMPERES 60 VOLTS RDS(on) = 0.080 OHM
MTD20N06HD 制造商:ON Semiconductor 功能描述:Trans MOSFET N-CH 60V 20A 3-Pin(2+Tab) DPAK Rail 制造商:ON Semiconductor 功能描述:MOSFET N D-PAK
MTD20N06HD-1 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET 20 Amps, 60 Volts N−Channel DPAK