參數(shù)資料
型號(hào)： MTD10N10ELT4G
廠商： ON SEMICONDUCTOR
元件分類： 功率晶體管
英文描述： TMOS E−FET Power Field Effect Transistor DPAK for Surface Mount
中文描述： 10 A, 100 V, 0.22 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： LEAD FREE, CASE 369C-01, DPAK-3
文件頁(yè)數(shù)： 2/7頁(yè)
文件大?。?/td> 86K
代理商： MTD10N10ELT4G
MTD10N10EL
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(T
J
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
(V
= 0 Vdc, I
= 0.25 mAdc)
Temperature Coefficient (Positive)
V
(BR)DSS
100
115
Vdc
mV/
°
C
Zero Gate Voltage Drain Current
(V
DS
= 100 Vdc, V
GS
= 0 Vdc)
(V
DS
= 100 Vdc, V
GS
= 0 Vdc, T
J
= 125
°
C)
I
DSS
10
100
Adc
GateBody Leakage Current (V
GS
=
±
15 Vdc, V
DS
= 0 Vdc)
I
GSS
100
nAdc
ON CHARACTERISTICS
(Note 3)
Gate Threshold Voltage
(V
DS
= V
GS
, I
D
= 250 Adc)
Threshold Temperature Coefficient (Negative)
V
GS(th)
1.0
1.45
4.0
2.0
Vdc
mV/
°
C
Static DraintoSource OnResistance (V
GS
= 5.0 Vdc, I
D
= 5.0 Adc)
R
DS(on)
0.17
0.22
DraintoSource OnVoltage
(V
GS
= 5.0 Vdc, I
D
= 10 Adc)
(V
GS
= 5.0 Vdc, I
D
= 5.0 Adc, T
J
= 125
°
C)
V
DS(on)
1.85
2.6
2.3
Vdc
Forward Transconductance (V
DS
= 15 Vdc, I
D
= 5.0 Adc)
g
FS
2.5
7.9
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
DS
= 25 Vdc, V
GS
= 0 Vdc, f = 1.0 MHz)
C
iss
741
1040
pF
Output Capacitance
C
oss
175
250
Reverse Transfer Capacitance
C
rss
18.9
40
SWITCHING CHARACTERISTICS
(Note 4)
TurnOn Delay Time
(V
DD
= 50 Vdc, I
D
= 10 Adc,
V
GS
= 5.0 Vdc, R
G
= 9.1 )
t
d(on)
11
20
ns
Rise Time
t
r
74
150
TurnOff Delay Time
t
d(off)
17
30
Fall Time
t
f
38
80
Gate Charge (See Figure 8)
(V
DS
= 80 Vdc, I
D
= 10 Adc,
V
GS
= 5.0 Vdc)
Q
T
9.3
15
nC
Q
1
2.56
Q
2
4.4
Q
3
4.66
SOURCEDRAIN DIODE CHARACTERISTICS
Forward OnVoltage (Note 3)
(I
= 10 Adc, V
= 0 Vdc)
(I
S
= 10 Adc, V
GS
= 0 Vdc, T
J
= 125
°
C)
V
SD
0.98
0.898
1.6
Vdc
Reverse Recovery Time
(See Figure 14)
(I
S
= 10 Adc, V
GS
= 0 Vdc,
dI
S
/dt = 100 A/ s)
t
rr
124.7
ns
t
a
86
t
b
38.7
Reverse Recovery Stored Charge
Q
RR
0.539
C
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from the drain lead 0.25
″
from package to center of die)
L
D
4.5
nH
Internal Source Inductance
(Measured from the source lead 0.25
″
from package to source bond pad)
L
S
7.5
nH
3. Pulse Test: Pulse Width
≤
300 s, Duty Cycle
≤
2%.
4. Switching characteristics are independent of operating junction temperature.
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