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參數(shù)資料
| 型號： | MTD10N10ELT4 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | TMOS E-FET Power Field Effect Transistor DPAK for Surface Mount |
| 中文描述： | 10 A, 100 V, 0.22 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | CASE 369C-01, DPAK-3 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 93K |
| 代理商： | MTD10N10ELT4 |
Semiconductor Components Industries, LLC, 2004
March, 2004 Rev. 1
1
Publication Order Number:
MTD10N10EL/D
MTD10N10EL
TMOS EFET
Power Field Effect Transistor
DPAK for Surface Mount
NChannel EnhancementMode Silicon
Gate
This advanced TMOS EFET is designed to withstand high energy
in the avalanche and commutation modes. The new energy efficient
design also offers a draintosource diode with a fast recovery time.
Designed for low voltage, high speed switching applications in power
supplies, converters and PWM motor controls, these devices are
particularly well suited for bridge circuits where diode speed and
commutating safe operating areas are critical and offer additional
safety margin against unexpected voltage transients.
Features
Avalanche Energy Specified
SourcetoDrain Diode Recovery Time Comparable to a Discrete
Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits
I
DSS
and V
DS(on)
Specified at Elevated Temperature
Surface Mount Package Available in 16 mm, 13inch/2500
Unit Tape & Reel, Add T4 Suffix to Part Number
MAXIMUM RATINGS
(T
C
= 25
°
C unless otherwise noted)
Parameter
Symbol
Value
Unit
DraintoSource Voltage
V
DSS
100
Vdc
DraintoGate Voltage (R
GS
= 1.0 M
)
V
DGR
100
Vdc
GatetoSource Voltage — Continuous
— NonRepetitive (t
p
≤
10 ms)
V
GS
V
GSM
±
15
±
20
Vdc
Vpk
Drain Current — Continuous
Drain Current
— Continuous @ 100
°
C
Drain Current
— Single Pulse (t
p
≤
10
μ
s)
I
D
I
D
I
DM
10
6.0
35
Adc
Apk
Total Power Dissipation @ T
C
= 25
°
C
Derate above 25
°
C
Total Power Dissipation @ T
A
= 25
°
C (Note 2)
P
D
40
0.32
1.75
Watts
W/
°
C
Watts
Operating and Storage Temperature Range
T
J
, T
stg
55 to
150
°
C
Single Pulse DraintoSource Avalanche
Energy — Starting T
J
= 25
°
C
(V
DD
= 25 Vdc, V
GS
= 5.0 Vdc, I
L
= 10 Apk,
L = 1.0 mH, R
G
=25
)
E
AS
50
mJ
Thermal Resistance — Junction to Case
— Junction to Ambient (Note 1)
— Junction to Ambient (Note 2)
R
θ
JC
R
θ
JA
R
θ
JA
3.13
100
71.4
°
C/W
Maximum Temperature for Soldering
Purposes, 1/8
″
from case for 10 seconds
T
L
260
°
C
1. When surface mounted to an FR4 board using minimum recommended pad size.
2. When surface mounted to an FR4 board using 0.5 sq in pad size.
http://onsemi.com
MARKING DIAGRAM
& PIN ASSIGNMENTS
10N10EL=Device Code
Y
= Year
WW
= Work Week
D
S
G
V
DSS
R
DS(ON)
TYP
I
D
MAX
100 V
0.22
10 A
NChannel
1
Gate
3
Source
2
Drain
4
Drain
Device
Package
Shipping
ORDERING INFORMATION
MTD10N10EL
DPAK
75 Units/Rail
DPAK
CASE 369C
(Surface Mount)
Style 2
MTD10N10ELT4
DPAK
2500 Tape & Reel
1 2
3
4
Y
1
1
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
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