參數(shù)資料
型號(hào)： MTD10N10ELT4G
廠商： ON SEMICONDUCTOR
元件分類： 功率晶體管
英文描述： TMOS E−FET Power Field Effect Transistor DPAK for Surface Mount
中文描述： 10 A, 100 V, 0.22 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： LEAD FREE, CASE 369C-01, DPAK-3
文件頁數(shù)： 1/7頁
文件大小： 86K
代理商： MTD10N10ELT4G
Semiconductor Components Industries, LLC, 2006
June, 2006 Rev. 3
1
Publication Order Number:
MTD10N10EL/D
MTD10N10EL
TMOS EFET
Power Field Effect Transistor
DPAK for Surface Mount
NChannel EnhancementMode Silicon
Gate
This advanced TMOS EFET is designed to withstand high energy
in the avalanche and commutation modes. The new energy efficient
design also offers a draintosource diode with a fast recovery time.
Designed for low voltage, high speed switching applications in power
supplies, converters and PWM motor controls, these devices are
particularly well suited for bridge circuits where diode speed and
commutating safe operating areas are critical and offer additional
safety margin against unexpected voltage transients.
Features
Avalanche Energy Specified
SourcetoDrain Diode Recovery Time Comparable to a Discrete
Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits
I
DSS
and V
DS(on)
Specified at Elevated Temperature
PbFree Package is Available
MAXIMUM RATINGS
(T
C
= 25
°
C unless otherwise noted)
Parameter
Symbol
Value
Unit
DraintoSource Voltage
V
DSS
V
DGR
V
GS
V
GSM
100
Vdc
DraintoGate Voltage (R
GS
= 1.0 M )
GatetoSource Voltage Continuous
NonRepetitive (t
p
≤
10 ms)
100
Vdc
±
15
±
20
Vdc
Vpk
Drain Current
Continuous
Continuous @ 100
°
C
Single Pulse (t
p
≤
10 s)
I
D
I
D
I
DM
10
6.0
35
Adc
Apk
Total Power Dissipation @ T
C
= 25
°
C
Derate above 25
°
C
Total Power Dissipation @ T
A
= 25
°
C (Note 2)
P
D
40
0.32
1.75
W
W/
°
C
W
Operating and Storage Temperature Range
T
J
, T
stg
55 to
150
°
C
Single Pulse DraintoSource Avalanche
Energy Starting T
J
= 25
°
C
(V
= 25 Vdc, V
= 5.0 Vdc, I
L
= 10 Apk,
L = 1.0 mH, R
G
= 25 )
Thermal Resistance
JunctiontoCase
JunctiontoAmbient (Note 1)
JunctiontoAmbient (Note 2)
E
AS
50
mJ
R
θ
JC
R
θ
JA
R
θ
JA
T
L
3.13
100
71.4
°
C/W
Maximum Temperature for Soldering
Purposes, 1/8
″
from case for 10 sec
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. When surface mounted to an FR4 board using minimum recommended pad
size.
2. When surface mounted to an FR4 board using 0.5 sq in pad size.
260
°
C
http://onsemi.com
MARKING DIAGRAM & PIN ASSIGNMENTS
10N10EL
Y
WW
G
= Device Code
= Year
= Work Week
= PbFree Package
D
S
G
V
DSS
R
DS(ON)
TYP
I
D
MAX
100 V
0.22
10 A
NChannel
Gate 1
4
Drain
Device
Package
Shipping
ORDERING INFORMATION
DPAK
CASE 369C
(Surface Mount)
STYLE 2
MTD10N10ELT4G
DPAK
(PbFree)
2500 Tape & Reel
1 2
3
4
YWW
10ELG
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Drain 2
Source 3
MTD10N10ELT4
DPAK
2500 Tape & Reel
10N
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