參數(shù)資料
型號： MT58L256L18P1
廠商： Micron Technology, Inc.
英文描述： 256K x 18,Pipelined, SCD SyncBurst SRAM(4Mb，流水線式，單循環(huán)取消選擇，同步脈沖靜態(tài)存儲器)
中文描述： 256 × 18，流水線，SCD的SyncBurst的SRAM（4MB，在流水線式，單循環(huán)取消選擇，同步脈沖靜態(tài)存儲器）
文件頁數(shù)： 16/28頁
文件大?。?/td> 445K
代理商： MT58L256L18P1
16
4Mb: 256K x 18, 128K x 32/36 Pipelined, SCD SyncBurst SRAM
MT58L256L18P1_2.p65 – Rev. 8/00
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2000, Micron Technology, Inc.
4Mb: 256K x 18, 128K x 32/36
PIPELINED, SCD SYNCBURST SRAM
PRELIMINARY
MAX
NOTE:
1. V
DD
Q = +3.3V +0.3V/-0.165V for 3.3V I/O configuration; V
DD
Q = +2.5V +0.4V/-0.125V for 2.5V I/O configuration.
2. I
DD
is specified with no output current and increases with faster cycle times. I
DD
Q increases with faster cycle times and
greater output loading.
3. “ Device deselected” means device is in power-down mode as defined in the truth table. “ Device selected” means
device is active (not in power-down mode).
4. Typical values are measured at 3.3V, 25°C, and 10ns cycle time.
I
DD
OPERATING CONDITIONS AND MAXIMUM LIMITS
(Note 1) (0°C
￡
T
A
￡
+70°C; V
DD
= +3.3V +0.3V/-0.165V unless otherwise noted)
DESCRIPTION
Power Supply
Current:
Operating
Power Supply
Current: Idle
CONDITIONS
S Y M TY P -4
-4.4
-5
-6
-7.5 -10 UNITS NOTES
Device selected; All inputs
￡
V
IL
or
3
V
IH
; Cycle time
3
t
KC (MIN);
V
DD
= MAX; Outputs open
Device selected; V
DD
= MAX;
ADSC#, ADSP#, GW#, BWx#, ADV#
3
V
IH
; All inputs
￡
V
SS
+ 0.2 or
3
V
DD
Q - 0.2;
Cycle time
3
t
KC (MIN)
Device deselected; V
DD
= MAX;
All inputs
￡
V
SS
+ 0.2 or
3
V
DD
Q - 0.2;
All inputs static; CLK frequency = 0
Device deselected; V
DD
= MAX;
All inputs
￡
V
IL
or
3
V
IH
;
All inputs static; CLK frequency = 0
Device deselected; V
DD
= MAX;
ADSC#, ADSP#, GW#, BWx#, ADV#
3
V
IH
; All inputs
￡
V
SS
+ 0.2 or
3
V
DD
Q - 0.2;
Cycle time
3
t
KC (MIN)
I
DD
225 625 575 525 475 375 300
mA
2, 3, 4
I
DD
1
55 140 130 120 110 90
85
mA
2, 3, 4
CMOS Standby
I
SB
2
0.4
10
10
10
10
10
10
mA
3, 4
TTL Standby
I
SB
3
8
25
25
25
25
25
25
mA
3, 4
Clock Running
I
SB
4
55 140 130 120 110 90
85
mA
3, 4
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