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64Mb: x32 SDRAM
64MSDRAMx32_5.p65 – Rev. B; Pub. 6/02
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2002, Micron Technology, Inc.
64Mb: x32
SDRAM
ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC OPERATING CONDITIONS
(Notes: 5, 6, 8, 9, 11; notes appear on page 35)
AC CHARACTERISTICS
PARAMETER
Access time from CLK
(pos. edge)
-5
-55
SYMBOL
t
AC (3)
t
AC (2)
t
AC (1)
t
AH
t
AS
t
CH
t
CL
t
CK (3)
t
CK (2)
t
CK (1)
t
CKH
t
CKS
t
CMH
t
CMS
t
DH
t
DS
t
HZ (3)
t
HZ (2)
t
HZ (1)
t
LZ
t
OH
t
RAS
t
RC
t
RFC
t
RCD
t
REF
t
RP
t
RRD
t
T
t
WR
t
XSR
MIN
MAX
4.5
-
-
MIN
MAX UNITS NOTES
5
ns
-
ns
-
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
120k
ns
ns
ns
ns
64
ms
ns
ns
1.2
ns
t
CK
ns
CL = 3
CL = 2
CL = 1
Address hold time
Address setup time
CLK high-level width
CLK low-level width
Clock cycle time
1
1
1.5
2
2
5
-
-
1
1.5
1
1.5
1
1.5
4.5
-
-
1
1.5
38.7
55
60
15
1.5
2
2
5.5
-
-
1
1.5
1
1.5
1
1.5
5
-
-
1
2
38.7
55
60
16.5
CL = 3
CL = 2
CL = 1
23
23
23
CKE hold time
CKE setup time
CS#, RAS#, CAS#, WE#, DQM hold time
CS#, RAS#, CAS#, WE#, DQM setup time
Data-in hold time
Data-in setup time
Data-out high-impedance time
CL = 3
CL = 2
CL = 1
10
10
10
Data-out low-impedance time
Data-out hold time
ACTIVE to PRECHARGE command
ACTIVE to ACTIVE command period
AUTO REFRESH period
ACTIVE to READ or WRITE delay
Refresh period (4,096 rows)
PRECHARGE command period
ACTIVE bank
a
to ACTIVE bank
b
command
Transition time
WRITE recovery time
Exit SELF REFRESH to ACTIVE command
120k
64
15
10
0.3
2
55
16.5
11
0.3
2
55
25
7
24
20
1.2
CAPACITANCE
(Note: 2; notes appear on page 35)
PARAMETER
Input Capacitance: CLK
Input Capacitance: All other input-only pins
Input/Output Capacitance: DQs
SYMBOL
C
I
1
C
I
2
C
IO
MIN
2.5
2.5
4.0
MAX
4.0
4.0
6.5
UNITS
pF
pF
pF