參數(shù)資料
型號(hào): MT48LC2M32B2
廠商: Micron Technology, Inc.
英文描述: SYNCHRONOUS DRAM
中文描述: 同步DRAM
文件頁(yè)數(shù): 31/53頁(yè)
文件大小: 1818K
代理商: MT48LC2M32B2
31
64Mb: x32 SDRAM
64MSDRAMx32_5.p65 – Rev. B; Pub. 6/02
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2002, Micron Technology, Inc.
64Mb: x32
SDRAM
I
DD
SPECIFICATIONS AND CONDITIONS
(Notes: 1, 6, 11, 13, 27; notes appear on page 35) (V
DD
, V
DD
Q = +3.3V ±0.3V)
PARAMETER/CONDITION
OPERATING CURRENT: Active Mode;
Burst = 2; READ or WRITE;
t
RC =
t
RC (MIN);
CAS latency = 3
STANDBY CURRENT: Power-Down Mode;
CKE = LOW; All banks idle
STANDBY CURRENT: Active Mode; CS# = HIGH;
CKE = HIGH; All banks active after
t
RCD met;
19, 26
No accesses in progress
OPERATING CURRENT: Burst Mode; Continuous burst;
READ or WRITE; All banks active,
CAS latency = 3
AUTO REFRESH CURRENT:
CAS latency = 3; CKE, CS# = HIGH
SYMBOL
I
DD
1
-5
200
-55
190
UNITS NOTES
mA
3, 18,
19, 26
I
DD
2
2
2
mA
I
DD
3
80
70
mA
3, 12,
I
DD
4
280
260
mA
3, 18,
19, 26
t
RFC =
t
RFC (MIN)
I
DD
5
225
225
mA
3, 12,
18, 19,
26, 29
4
SELF REFRESH CURRENT: CKE
0.2V
I
DD
6
2
2
mA
MAX
I
DD
SPECIFICATIONS AND CONDITIONS
(Notes: 1, 6, 11, 13, 27; notes appear on page 35) (V
DD
, V
DD
Q = +3.3V ±0.3V)
PARAMETER/CONDITION
OPERATING CURRENT: Active Mode;
Burst = 2; READ or WRITE;
t
RC =
t
RC (MIN);
CAS latency = 3
STANDBY CURRENT: Power-Down Mode;
CKE = LOW; All banks idle
STANDBY CURRENT: Active Mode; CS# = HIGH;
CKE = HIGH; All banks active after
t
RCD met;
No accesses in progress
OPERATING CURRENT: Burst Mode; Continuous burst;
READ or WRITE; All banks active,
CAS latency = 3
AUTO REFRESH CURRENT:
CAS latency = 3; CKE, CS# = HIGH
SYMBOL
I
DD
1
-6
150
-7
130
UNITS NOTES
mA
3, 18,
19, 26
I
DD
2
2
2
mA
I
DD
3
60
50
mA
3, 12,
19, 26
I
DD
4
180
160
mA
3, 18,
19, 26
t
RFC =
t
RFC (MIN)
I
DD
5
225
225
mA
3, 12,
18, 19,
26, 29
4
SELF REFRESH CURRENT: CKE
0.2V
I
DD
6
2
2
mA
MAX
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MT48LC2M32B2-6G 制造商:Micron Technology Inc 功能描述: