參數(shù)資料
型號: MRF5P21045NR1
廠商: 飛思卡爾半導(dǎo)體(中國)有限公司
英文描述: RF Power Field-Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
中文描述: 射頻功率場效應(yīng)晶體管N溝道增強型MOSFET的側(cè)向
文件頁數(shù): 10/11頁
文件大小: 423K
代理商: MRF5P21045NR1
10
RF Device Data
Freescale Semiconductor
MRF5P21045NR1
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process.
Application Notes
AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over-Molded Plastic Packages
Engineering Bulletins
EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
April 2007
Initial Release of Data Sheet
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MRF5P21180 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor
MRF5P21180HR5 功能描述:射頻MOSFET電源晶體管 HV5 38W WCDMA NI1230H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF5P21180HR6 功能描述:射頻MOSFET電源晶體管 HV5 38W WCDMA NI1230H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF5P21180HR6_08 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor
MRF5P21180R6 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF Power Field Effect Transistor