參數(shù)資料
型號： MRF5S19130SR3
廠商： MOTOROLA INC
元件分類： 功率晶體管
英文描述： N-Channel Enhancement-Mode Lateral MOSFETs
中文描述： L BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝： NI-880S, CASE 465C-02, 2 PIN
文件頁數(shù)： 1/12頁
文件大?。?/td> 415K
代理商： MRF5S19130SR3
MRF5S19130HR3 MRF5S19130HSR3
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
Designed for PCN and PCS base station applications at frequencies from
1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier
applications.
Typical 2-Carrier N-CDMA Performance for V
DD
= 28 Volts, I
DQ
=
1200 mA, P
out
= 26 Watts Avg., Full Frequency Band, IS-95 CDMA (Pilot,
Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth =
1.2288 MHz. Peak/Avg. = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain — 13 dB
Drain Efficiency — 25%
IM3 @ 2.5 MHz Offset — -37 dBc @ 1.2288 MHz Bandwidth
ACPR @ 885 kHz Offset — -51 dB
@ 30 kHz Bandwidth
Capable of Handling 10:1 VSWR, @ 28 Vdc, f1 = 1960 MHz,
110 Watts CW Output Power
Characterized with Series Equivalent Large-Signal Impedance Parameters
Internally Matched, Controlled Q, for Ease of Use
Qualified Up to a Maximum of 32 V Operation
Integrated ESD Protection
Lower Thermal Resistance Package
Low Gold Plating Thickness on Leads, 40
μ
″
Nominal.
Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain-Source Voltage
V
DSS
-0.5, +65
Vdc
Gate-Source Voltage
V
GS
-0.5, +15
Vdc
Total Device Dissipation @ T
C
= 25
°
C
Derate above 25
°
C
P
D
438
2.50
W
W/
°
C
Storage Temperature Range
T
stg
- 65 to +150
°
C
Operating Junction Temperature
T
J
200
°
C
CW Operation
CW
110
W
Table 2. Thermal Characteristics
Characteristic
Symbol
Value
(1,2)
Unit
Thermal Resistance, Junction to Case
Case Temperature 80
°
C, 115 W CW
Case Temperature 78
°
C, 26 W CW
R
θ
JC
0.40
0.46
°
C/W
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
2. Refer to AN1955/D,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
NOTE -
CAUTION
- MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
MRF5S19130H
Rev. 1, 12/2004
Freescale Semiconductor
Technical Data
MRF5S19130HR3
MRF5S19130HSR3
1990 MHz, 26 W AVG., 28 V
2 x N-CDMA
LATERAL N-CHANNEL
RF POWER MOSFETs
CASE 465C-02, STYLE 1
NI-880S
MRF5S19130HSR3
CASE 465B-03, STYLE 1
NI-880
MRF5S19130HR3
Freescale Semiconductor, Inc., 2004. All rights reserved.
相關(guān)PDF資料
PDF描述
MRF5S19130R3 N-Channel Enhancement-Mode Lateral MOSFETs
MRF5S19130HSR3 Suitable for TDMA, CDMA and multicarrier amplifier applications.
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MRF5S21045 RF Power Field Effect Transistors
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MRF5S19150HR3_08 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
MRF5S19150HR5 功能描述:射頻MOSFET電源晶體管 HV5 32W N/CDMA RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
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