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參數(shù)資料
| 型號： | MN18R1628DF0-CT9 |
| 元件分類： | DRAM |
| 英文描述： | 128M X 18 RAMBUS MODULE, XMA200 |
| 文件頁數(shù)： | 16/16頁 |
| 文件大?。?/td> | 514K |
| 代理商： | MN18R1628DF0-CT9 |
Page 8
Version 1.2 Dec. 2003
MP18R1624(8)DF0
MN18R1624(8)DF0
NexMod Module Current Profile
Table 7 : NexMod Module Current Profile
IDD
NexMod Module Capacity:
144MB
288MB
Unit
Number of 288Mb RDRAM devices
4
8
NexMod module power conditions a b c d
Freq.
Max
IDD1
One RDRAM device in Read, balance in NAP
mode
-1066
712
728
mA
-800
572
588
IDD2
One RDRAM device in Readb, balance in Standby
mode
-1066
1000
1400
mA
-800
800
1120
IDD3
One RDRAM device in Readb, balance in Active
mode
-1066
1150
1750
mA
-800
920
1400
IDD4
One RDRAM device in Write, balance in NAP
mode
-1066
802
818
mA
-800
632
648
IDD5
One RDRAM device in Write, balance in Standby
mode
-1066
1090
1490
mA
-800
860
1180
IDD6
One RDRAM device in Write, balance in Active
mode
-1066
1240
1840
mA
-800
980
1460
a. Actual power will depend on memory controller and usage patterns. Power does not include Refresh Current.
b. Memory current only, Total power of module should include all active elements’ power on termination module.
c. DRCG on NexMod module always consume power regardless internal DRCG option. (example: VDD = 3.0± 0.15V, IDD= Max. 150mA)
d. I/O current is a function of the % of 1’s, to add I/O power for 50% 1’s, X18 ECC module needs to add 290mA for the following: VDD = 2.5V, VTERM
= 1.8V, VREF = 1.4V and VDIL = VREF - 0.5V.
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